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Miscellaneous

This study investigates the operational integrity of FRAM memory devices under total dose testing conditions. Specifically scrutinizing the LVDO regulator, we observed elevated output voltages (3.3V to 4.4V) leading to catastrophic failures in FM1608 devices post-irradiation. While Rohm (serial) and Ramtron (parallel) devices demonstrated resilience against moderate doses, the FM1608 suffered complete functionality loss, with annealing proving ineffective. Our findings indicate that in situ functional tests and a step irradiation approach are essential to establish the robustness of these devices under radiation stress, revealing the CMOS process is not the limiting factor.

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Miscellaneous

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  1. Miscellaneous

  2. LVDO Regulator Failure VOUT 3.3V  4.4V Destructive

  3. FRAM Memory Functionality Loss During Total Dose Test In situ static current measurements of two serial and one parallel FRAM device types. This initial study showed that Rohm (serial) and Ramtron research fab (parallel) devices could withstand moderate doses without significant leakage currents. Post irradiation testing of the FM1608 showed that all devices catastrophically failed. Annealling did not help. In situ functional tests or a step irradiation method are needed for determination of the functional limit. The base CMOS process is not the limiting factor for the FM1608.

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