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DUV ASML 5500/90 Stepper for Novel Lithography

DUV ASML 5500/90 Stepper for Novel Lithography. SFR Workshop May 24, 2001 SFR:Andrew R. Neureuther, Mosong Cheng, Haolin Zhang SRC/DARPA Garth Robins, Mike Williamson, Lei Yuan Microlab: Sia Parsa, Kim Chan, Evan Stateler, Bob Hamilton MEMS: Sunil Behave, Richard Yeh Berkeley, CA.

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DUV ASML 5500/90 Stepper for Novel Lithography

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  1. DUV ASML 5500/90 Stepper for Novel Lithography SFR Workshop May 24, 2001 SFR:Andrew R. Neureuther, Mosong Cheng, Haolin Zhang SRC/DARPA Garth Robins, Mike Williamson, Lei Yuan Microlab: Sia Parsa, Kim Chan, Evan Stateler, Bob Hamilton MEMS: Sunil Behave, Richard Yeh Berkeley, CA 2001 GOAL: Complete initial simulations and experiments sufficient to design polarization masks and multi-parameter test structures 9/30/2001.

  2. Motivation • Small Feature Reproducibility at low k1, high NA with phase-shifting masks and chemically-amplified resists is a very complex engineering task. • Modeling and simulation suggest many novel ideas for resolution enhancement, optical system characterization, resist processing and resist parameter extraction. • The ASML DUV system provides a flexible optical tool for exploring novel approaches to projection printing and its characterization. • Resolution below 1/3 mm is also attractive for novel uses of lithography for MEMS and biological applications.

  3. ASML DUV Stepper and Impact • Donated/installed ASML with Cymer laser support (and assisted with unanticipated costs of $75K) • DUV 248 nm, NA = 0.50, s = flex to 0.8? • 29.7 mm diameter field • Working Resolution • 0.4 um with Berkeley masks • 0.3 um with commercial $1500 masks • 0.2 um with modified illumination • 0.1 um (but 0.25 um pitch) with PSM • Impact • IC technology and devices • MEMS, BIO, etc (due to resolution and field size)

  4. ASML 5500/90 Tool and Track Mask Port Light path

  5. Flexible Illumination System Fly’s eye that spreads light to cover mask Hexagonal light pipe

  6. Inexpensive Commercial Masks with MEBES III • CAPABILITY • Resolution 1 mm (0.2 mm on wafer) • Windage and grid 0.25 mm to 0.10 mm • (0.05 to 0.02 on wafer) • COST (100K flashes) • 0.1 mm tolerance $2000 • 0.25 mm tolerance $1500 • No inspection and less than 10% 0.1 grid $1000?

  7. Special Test Mask and First Wafer Mask design for ASML 248nm NA= 0.5 experiments LER Determination Test Mask Electrical Test Double Exposure Gratings Aberration Targets Basic Resolution

  8. Novel Lithography: Research and Synergy • Image Quality • Aberrations including chromatic • Pattern dependent resolution enhancement • Polarization as a remaining degree of freedom • Resist Modeling and Line End Shortening • Resist parameters including diffusion • Role of resist and image quality on performance • Ultimate Resist Limits • Line edge roughness • Novel processing (Electric-field enhanced) • Novel materials (dendrimers)

  9. Phase-shifted spillover Polarization adjusted half-tone Polarization orthogonal spillover 2002 and 2003 Goals Slitfor apodizing plate to set type of illumination Aberration Targets Illumination Conduct and quantitatively interpret polarization masks, and multi-parameter test structures, by 9/30/2002. Define apparatus, specify testing procedures, and interpret data for polarization masks, and multi-parameter test structures, by 9/30/2003.

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