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Introduction , P ast W ork and F uture Perspectives : A Concise Summary. CERN, 18.02.2013 Arno E. Kompatscher CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH Erfurt, Germany. Contents. Personal Introduction Diploma Thesis General outline Crystallography

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introduction p ast w ork and f uture perspectives a concise summary
Introduction, PastWork andFuture Perspectives:

A Concise Summary

  • CERN, 18.02.2013
  • Arno E. Kompatscher
  • CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH
  • Erfurt, Germany
contents
Contents
  • Personal Introduction
  • Diploma Thesis
    • General outline
    • Crystallography
    • Martensite
    • Preparation
    • Analysis and results
      • TEM bright field
      • TEM selected area diffraction (SAD)
      • DSC
    • Conclusions
contents1
Contents
  • Present Work and Future
    • 4’’ wafer layout
    • 6’’ wafer layout
    • Comparison
      • Quad vs. FE-I4 vs. FE-I3
      • Ganged & long pixels (Quad, center)
      • With and without long pixels (edge)
      • Bias grid variations
    • Prospects
personal introduction
PersonalIntroduction
  • Arno E. Kompatscher
  • Born June 4, 1984 in Hall in Tirol
  • Hometown: Feldkirch, Vorarlberg
  • Studiedphysicsat University of Vienna
  • Thesis: ElectronmicroscopyofNi-Mn-Gaalloys
  • Mag.rer.nat. (= M.Sc.) on August 28, 2012
personal introduction current work
Personal IntroductionCurrent Work
  • Since November 1, 2012:
  • Early Stage Researcher
    • CiS Forschungsinstitut für Mikrosensorik und Photovoltaik GmbH
    • Erfurt, Thuringia
  • Ph.D. via
    • Prof. Claus Gößling
    • Lehrstuhl Experimentelle Physik IV
    • TU Dortmund, North Rhine-Westphalia
diploma thesis
Diploma Thesis

“Phase transformations in Ni-Mn-Ga shape memory alloys subjected to severe plastic deformation”

Supervisor:

Prof. Thomas Waitz

Group:

Physics of Nanostructured Materials (PNM)

Faculty of Physics, University of Vienna

physnano.univie.ac.at

diploma thesis general outline
Diploma ThesisGeneral Outline
  • Material:
    • Ni54Mn25Ga21
    • Tetragonal martensite (2M) in initialstate
  • Preparation:
    • High pressure torsion (HPT)
    • Annealing (heat treatment)
  • Analysis
    • Transmission electron microscopy (TEM)
    • Differential scanning calorimetry (DSC)
    • X-ray diffractometry(XRD)
diploma thesis crystallography
Diploma ThesisCrystallography

Austenite

(L21Heusler)

Martensite

(I4/mmm, bct)

diploma thesis martensite
Diploma ThesisMartensite
  • Martensiticphasetransformation
  • Displacive, diffusionless, 1st order
  • Low temperaturemartensite
  • High temperatureaustenite
diploma thesis martensite1
Diploma ThesisMartensite

Different variantsofmartensite

Unmodulated (2M, initialstate), Modulated (7M and 5M)

diploma thesis preparation
Diploma ThesisPreparation

d = 0.4±0.1

Degreeofdeformation :

2.2 · 105 % and 6.5 · 105 %

High pressuretorsion (HPT):

8 GPa, 50 and 100 turns

diploma thesis analysis
Diploma ThesisAnalysis
  • Transmission electronmicroscopy (TEM)
    • Microstructure, grainsize, latticestructure, latticeparameters
  • Differential scanningcalorimentry (DSC)
    • Heattreatment, ID ofphasetransitionsandrespectiveenthalpies
  • X-Ray diffractometry (XRD)
    • Confirmationoflatticestructuresandparameters
diploma thesis analysis1
Diploma ThesisAnalysis

Initial Material: w/o HPT, w/o heattreatment

As deformed: after HPT, w/o heattreatment

After HPT, heattreatmentto 420°C

After HPT, heattreatmentto 500°C

diploma thesis tem bright field
Diploma ThesisTEM brightfield

Initial state

As deformed

Eachmartensiticvariant isinternallytwinned; grainsizeseveralhundredsofm

Strong grainfragmentation due tosevereplasticdeformation (SPD)

diploma thesis tem bright field1
Diploma ThesisTEM brightfield

HT 420°C

HT 500°C

Beginningsofgrainnucleation; smallpolygonizedgrainsstartto form due toheattreatment (arrows)

Grainnucleationcompleted, clearlyidentifyablepolygonizedgrains; grainsize140±6 nm

diploma thesis tem sad
Diploma ThesisTEM SAD

Initial state

As deformed

Disorderedtetragonal (fct), facecenteredcubic (fcc), nomartensite

Tetragonal martensite

diploma thesis tem sad1
Diploma ThesisTEM SAD

HT 420°C

HT 500°C

Intermediadestructuredetected: disorderedbodycenteredcubic (bcc)

7M martensiteobservedtobepredominant

diploma thesis dsc initial state
Diploma ThesisDSC, initialstate

AP = 208 °C

MP = 190 °C

diploma thesis dsc progression
Diploma ThesisDSC, progression
  • Change ofmartensiteandaustenitepeaktemperatures (AP, MP) due toheattreatment
  • Sample 1: shortannealing time (10 min at 500 °C, almostdirectly after HPT)
  • Sample 7: longannealing time (505 min attemperaturesfrom 500 to 675 °C)
diploma thesis conclusions
Diploma ThesisConclusions
  • HPT induces strong grainrefinement
    • Hundredsofm before HPT
    • 140±6 nm after HPT
  • HPT causesdisorderingandsuppressionofmartensitictransformation
  • Upon heattreatmentto 500 °C the adaptive 7M martensiticstructureforms
diploma thesis acknowledgement
Diploma ThesisAcknowledgement
  • Prof. Thomas Waitz, supervisor
  • Dr. Clemens Mangler, assistantsupervisor
  • PhysicsofNanostructured Materials (PNM) Group
  • FacultyofPhysics, University of Vienna
  • Materials Center Leoben (MCL)
  • Fonds zur Förderung der wissenschaftlichen Forschung (FWF)
present work future motivation
Present Work & FutureMotivation

Past: developmentofnewsensorsforinsertable B-layer (ATLAS Upgrade Phase I, happeningnow)

Development ofnewdetectorsfor

ATLAS Upgrade Phase II (2022)

present work future 4 wafer
Present Work & Future4‘‘ Wafer
  • 2 x Quad
  • 3 x FE-I4
    • Bias gridvariants
    • Long pixels (old)
    • Nolongpixels (new)
  • 8 x FE-I3
    • Severalvariants
    • Special: w/o biasgrid
  • Test structures
    • Diodes
    • Temp. resistors
    • etc.
present work future 6 wafer
Present Work & Future6‘‘ Wafer
  • 4 x Quad
  • 12 x FE-I4
    • Bias gridvariants
    • Long pixels (old)
    • Nolongpixels (new)
  • 16 x FE-I3
    • Severalvariants
    • Special: w/o biasgrid
  • Test structures
    • Diodes
    • Temp. resistors
    • etc.
present work future comparison1
Present Work & FutureComparison

+

Problem:

Higher riskoffracture

Benefit:

Larger areaofactivepixels

present work future comparison2
Present Work & FutureComparison
  • w/ and w/o longpixels
  • Long pixels
    • Removed
  • Guard rings
    • Readjusted
    • Nowbelowstandardpixels
  • Benefits:
    • Slimmer design
    • Precision totheveryedge
present work future bias grid variations
Present Work & FutureBias gridvariations
  • Problem:
  • High leakagecurrentsat HV
  • Possible Source:
  • Bias grid (dots)
  • Proposed Solution:
  • Varyingbiasgridlayout
  • Var. 1: biasdotsunchanged, grid per column
  • Var. 2: biasdotsunchanged, gridatpixelcenter
  • Var. 3: biasdotsandgridatpixelcenter
  • Control: nobiasgrid
present work future prospects
Present Work & FutureProspects

Processing of 6‘‘ Wafers (CiS)

Characterizationand Analysis (TU Dortmund)

Test beam (DESY, Hamburg)

Increasingradiationhardness