investigation on mgo long feng jin huan yu min han qiyan shi yi 2 011 12 8 n.
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Investigation on MgO Long Feng, Jin Huan, Yu Min, Han Qiyan, Shi Yi 2 011-12-8. CN A-IVC 201112-F01. CONTENTS MgO purity Binder 3. Density and compaction ratio 3.1 Density 3.2 Compaction ratio 3.3 Conclusion 4. Other works. 2. MgO putity.

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CONTENTS

  • MgO purity
  • Binder
  • 3. Density and compaction ratio
  • 3.1 Density
  • 3.2 Compaction ratio
  • 3.3 Conclusion
  • 4. Other works

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MgO putity

Three suppliers for high purity MgO.

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Potential supplier: Dashiqiao, analysis on the Carbon content of Mgo block before and after sintering.

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MgO putity (cont.)

Carbon content of Mgo block before and after sintering

Haicheng: purity of MgO 99.19%. Used for the last SSMI conductor short samples.

Requirement of C content: ≤0.02

Suggestion: Relax the requirement of Carbon content for MgO material to ≤0.1.

Further analysis for C content of MgO block after sintering.

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2. Binder

  • Binder:
  • 107 glue
  • Deionized water
  • - Easy cracking
  • Polyvinyl alcohol
  • - 1% consistence and 2% mixture ratio with MgO

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Insulation resistance of MgO block with different binder after baking exposed to air and N2.

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3. Density and compaction ratio

Φ15mm MgO cake, polyvinyl alcohol binder

Sintering temperature: 1000℃, 1050℃, 1100℃, 1150℃, 1200℃

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3. Density and compaction ratio

After compression

16t compression jack

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3.1 Density

570MPa compaction pressure

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3.2 Compaction ratio

1t pressure force

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3.3 Conclusion

  • For Φ15mm MgO cake, polyvinyl alcohol binder
  • Density after compaction is between 2.7~3g/cm3
  • Less molding pressure higher compaction ratio
  • Compaction ratio is not stable when the compression pressure is less than 60MPa
  • Reduce the molding pressure of MgO block to improve the compaction ratio
  • - Target compaction ratio is 36% (24% of the three short SSMIC samples).
  • Compaction machine provide 600MPa for MgO block compaction
  • 10MPa molding pressure for VS&ELM MgO block
  • Sintering temperature is 1150℃

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Free supports

  • Displacement in between the two supports:
  • 10m
  • Dy=362mm
  • 5m
  • Dy=10mm
  • 2m
  • Dy=0.19mm

4. Other works

- Gravity sag of CuCrZr conductor

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4. Other works

- Conductor baking (after compaction)

Baking: 450℃/4hours

Insulation resistance

Before baking: 0.03MΩ

After baking: >10GΩ@DC500V

Baking: 500℃/12hours

Insulation resistance

Before baking: 32MΩ

After baking: >10GΩ@DC500V

4 meters baking furnace in design for Cu conductor, jacket before assembly and SSMI conductor baking.

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4. Other works

- Short VS conductor sample compaction

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