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Phonon-Limited Injection Velocity in Si, Ge, and InAs NW FETs: A Study of Ballisticity

This study analyzes the phonon-limited injection velocity (v_inj) and ballisticity at the barrier top in n-type Si and InAs, and p-type Si and Ge nanowire field-effect transistors (NW FETs) with various orientations. Utilizing a tight-binding model, atomistic representations, and quantized phonon dispersion, the quantum transport is computed using Non-Equilibrium Green's Function (NEGF) methods. Results reveal that InAs NWs achieve the highest electron velocity near the ballistic limit, while Ge NWs exhibit the highest hole velocity at 50-60% of the ballistic limit.

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Phonon-Limited Injection Velocity in Si, Ge, and InAs NW FETs: A Study of Ballisticity

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  1. Injection Velocity in Si, Ge, and InAs NW FETsMathieu Luisier and Gerhard Klimeck IEDM 2010 [110] [100] Objective: • Calculate phonon-limited injection velocity vinj and ballisticity at the top-of-the barrier in n-type Si and InAs and p-type Si and Ge NW FETs with different oritentations [111] Approach: • Tight-binding (sp3d5s*) description of the electron/hole properties • Atomistic Representation of the NWs • Quantized phonon dispersion (VFF) • Quantum transport with NEGF Si NW FET structure Results and Impacts: • vinjas function of the charge density at the top-of-the-barrier • [100] InAs NW highest electron velocity and close to ballistic limit • [110] Ge NW highest hole velocity, but 50-60% of ballistic limit Caption: Phonon-limited electron (left) and hole (right) injection velocity in Si, Ge, and InAs NW FETs

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