Huifang Qin, Kevin Cao, Prof. Jan Rabaey   Berkeley Wireless Research Center 1 Preloader

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Outline. Introduction Go low voltage in digital CMOS design! Power Delay Reliability Memory side Results from SRAM leakage control test chip Data Retention Voltage (DRV) Timing overhead in modes switching Leakage saving in low voltage standby Low standby supply voltage generation L

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