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Single-Stage Integrated- Circuit Amplifiers

Single-Stage Integrated- Circuit Amplifiers. 1. Table 6.3.

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Single-Stage Integrated- Circuit Amplifiers

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  1. Single-Stage Integrated- Circuit Amplifiers 1

  2. Table 6.3 Microelectronic Circuits - Fifth Edition Sedra/Smith

  3. Figure 6.1 The intrinsic gain of the MOSFET versus bias current ID. Outside the subthreshold region, this is a plot of for the case: mnCox = 20 mA/V2, V9A = 20 V/mm, L = 2 mm, and W = 20 mm. Microelectronic Circuits - Fifth Edition Sedra/Smith

  4. Figure 6.2 Frequency response of a CS amplifier loaded with a capacitance CL and fed with an ideal voltage source. It is assumed that the transistor is operating at frequencies much lower than fT, and thus the internal capacitances are not taken into account. Microelectronic Circuits - Fifth Edition Sedra/Smith

  5. Figure 6.3 Increasing ID or W/L increases the bandwidth of a MOSFET amplifier loaded by a constant capacitance CL. Microelectronic Circuits - Fifth Edition Sedra/Smith

  6. Figure 6.4 Circuit for a basic MOSFET constant-current source. Microelectronic Circuits - Fifth Edition Sedra/Smith

  7. Figure 6.5 Basic MOSFET current mirror. Microelectronic Circuits - Fifth Edition Sedra/Smith

  8. Figure 6.6 Output characteristic of the current source in Fig. 6.4 and the current mirror of Fig. 6.5 for the case Q2 is matched to Q1. Microelectronic Circuits - Fifth Edition Sedra/Smith

  9. Figure 6.7 A current-steering circuit. Microelectronic Circuits - Fifth Edition Sedra/Smith

  10. Figure 6.8 The basic BJT current mirror. Microelectronic Circuits - Fifth Edition Sedra/Smith

  11. Figure 6.9 Analysis of the current mirror taking into account the finite b of the BJTs. Microelectronic Circuits - Fifth Edition Sedra/Smith

  12. Figure 6.10 A simple BJT current source. Microelectronic Circuits - Fifth Edition Sedra/Smith

  13. Figure 6.11 Generation of a number of constant currents of various magnitudes. Microelectronic Circuits - Fifth Edition Sedra/Smith

  14. Figure E6.8 Microelectronic Circuits - Fifth Edition Sedra/Smith

  15. Figure 6.12 Frequency response of a direct-coupled (dc) amplifier. Observe that the gain does not fall off at low frequencies, and the midband gain AM extends down to zero frequency. Microelectronic Circuits - Fifth Edition Sedra/Smith

  16. Figure 6.13 Normalized high-frequency response of the amplifier in Example 6.5. Microelectronic Circuits - Fifth Edition Sedra/Smith

  17. Figure 6.14 Circuits for Example 6.6: (a) high-frequency equivalent circuit of a MOSFET amplifier; (b) the equivalent circuit at midband frequencies; (c) circuit for determining the resistance seen by Cgs; and (d) circuit for determining the resistance seen by Cgd. Microelectronic Circuits - Fifth Edition Sedra/Smith

  18. Figure 6.15 The Miller equivalent circuit. Microelectronic Circuits - Fifth Edition Sedra/Smith

  19. Figure 6.16 Circuit for Example 6.7. Microelectronic Circuits - Fifth Edition Sedra/Smith

  20. Figure E6.13 Microelectronic Circuits - Fifth Edition Sedra/Smith

  21. Figure 6.17 (a) Active-loaded common-source amplifier. (b) Small-signal analysis of the amplifier in (a), performed both directly on the circuit diagram and using the small-signal model explicitly. Microelectronic Circuits - Fifth Edition Sedra/Smith

  22. Figure 6.18 The CMOS common-source amplifier; (a) circuit; (b)i–v characteristic of the active-load Q2; (c) graphical construction to determine the transfer characteristic; and (d) transfer characteristic. Microelectronic Circuits - Fifth Edition Sedra/Smith

  23. Figure 6.19 (a) Active-loaded common-emitter amplifier. (b) Small-signal analysis of the amplifier in (a), performed both directly on the circuit and using the hybrid-p model explicitly. Microelectronic Circuits - Fifth Edition Sedra/Smith

  24. Figure 6.20 High-frequency equivalent-circuit model of the common-source amplifier. For the common-emitter amplifier, the values of Vsig and Rsig are modified to include the effects of rp and rx; Cgs is replaced by Cp, Vgs by Vp, and Cgdby Cm. Microelectronic Circuits - Fifth Edition Sedra/Smith

  25. Figure 6.21 Approximate equivalent circuit obtained by applying Miller’s theorem while neglecting CL and the load current component supplied by Cgd. This model works reasonably well when Rsig is large and the amplifier high-frequency response is dominated by the pole formed by Rsig and Cin. Microelectronic Circuits - Fifth Edition Sedra/Smith

  26. Figure 6.22 Application of the open-circuit time-constants method to the CS equivalent circuit of Fig. 6.20. Microelectronic Circuits - Fifth Edition Sedra/Smith

  27. Figure 6.23 Analysis of the CS high-frequency equivalent circuit. Microelectronic Circuits - Fifth Edition Sedra/Smith

  28. Figure 6.24 The CS circuit at s5sZ. The output voltage Vo5 0, enabling us to determine sZ from a node equation at D. Microelectronic Circuits - Fifth Edition Sedra/Smith

  29. Figure 6.25 (a) High-frequency equivalent circuit of the common-emitter amplifier. (b) Equivalent circuit obtained after the Thévenin theorem is employed to simplify the resistive circuit at the input. Microelectronic Circuits - Fifth Edition Sedra/Smith

  30. Figure 6.26 (a) High-frequency equivalent circuit of a CS amplifier fed with a signal source having a very low (effectively zero) resistance. (b) The circuit with Vsig reduced to zero. (c) Bode plot for the gain of the circuit in (a). Microelectronic Circuits - Fifth Edition Sedra/Smith

  31. Figure 6.27 (a) Active-loaded common-gate amplifier. (b) MOSFET equivalent circuit for the CG case in which the body and gate terminals are connected to ground. (c) Small-signal analysis performed directly on the circuit diagram with the T model of (b) used implicitly. (d) Operation with the output open-circuited. Microelectronic Circuits - Fifth Edition Sedra/Smith

  32. Figure 6.28 (a) The output resistance Ro is found by setting vi5 0. (b) The output resistance Rout is obtained by setting vsig5 0. Microelectronic Circuits - Fifth Edition Sedra/Smith

  33. Figure 6.29 The impedance transformation property of the CG configuration. Microelectronic Circuits - Fifth Edition Sedra/Smith

  34. Figure 6.30 Equivalent circuit of the CG amplifier illustrating its application as a current buffer. Rin and Rout are given in Fig. 6.29, and Gis5Avo (Rs/Rout) . 1. Microelectronic Circuits - Fifth Edition Sedra/Smith

  35. Figure 6.31 (a) The common-gate amplifier with the transistor internal capacitances shown. A load capacitance CL is also included. (b) Equivalent circuit for the case in which ro is neglected. Microelectronic Circuits - Fifth Edition Sedra/Smith

  36. Figure 6.32 Circuits for determining Rgs and Rgd. Microelectronic Circuits - Fifth Edition Sedra/Smith

  37. Figure 6.33 (a) Active-loaded common-base amplifier. (b) Small-signal analysis performed directly on the circuit diagram with the BJT T model used implicitly. (c) Small-signal analysis with the output open-circuited. Microelectronic Circuits - Fifth Edition Sedra/Smith

  38. Figure 6.34 Analysis of the CB circuit to determine Rout. Observe that the current ix that enters the transistor must equal the sum of the two currents v/rp and v/Re that leave the transistor, that is; ix5v/rp1v/Re. Microelectronic Circuits - Fifth Edition Sedra/Smith

  39. Figure 6.35 Input and output resistances of the CB amplifier. Microelectronic Circuits - Fifth Edition Sedra/Smith

  40. Figure 6.36 (a) The MOS cascode amplifier. (b) The circuit prepared for small-signal analysis with various input and output resistances indicated. (c) The cascode with the output open-circuited. Microelectronic Circuits - Fifth Edition Sedra/Smith

  41. Figure 6.37 (a and b) Two equivalent circuits for the output of the cascode amplifier. Either circuit can be used to determine the gain Av5vo/vi, which is equal to Gv because Rin5¥ and thus vi5vsig. (c) Equivalent circuit for determining the voltage gain of the CS stage, Q1. Microelectronic Circuits - Fifth Edition Sedra/Smith

  42. Figure 6.38 The cascode circuit with the various transistor capacitances indicated. Microelectronic Circuits - Fifth Edition Sedra/Smith

  43. Figure 6.39 Effect of cascoding on gain and bandwidth in the case Rsig5 0. Cascoding can increase the dc gain by the factor A0 while keeping the unity-gain frequency constant. Note that to achieve the high gain, the load resistance must be increased by the factor A0. Microelectronic Circuits - Fifth Edition Sedra/Smith

  44. Figure 6.40 (a) The BJT cascode amplifier. (b) The circuit prepared for small-signal analysis with various input and output resistances indicated. Note that rx is neglected. (c) The cascode with the output open-circuited. Microelectronic Circuits - Fifth Edition Sedra/Smith

  45. Figure 6.41 (a) Equivalent circuit for the cascode amplifier in terms of the open-circuit voltage gain Avo5 –bA0. (b) Equivalent circuit in terms of the overall short-circuit transconductance Gm.gm. (c) Equivalent circuit for determining the gain of the CE stage, Q1. Microelectronic Circuits - Fifth Edition Sedra/Smith

  46. Figure 6.42 Determining the frequency response of the BJT cascode amplifier. Note that in addition to the BJT capacitances Cp and Cm, the capacitance between the collector and the substrate Ccs for each transistor are also included. Microelectronic Circuits - Fifth Edition Sedra/Smith

  47. Figure 6.43 A cascode current-source. Microelectronic Circuits - Fifth Edition Sedra/Smith

  48. Figure 6.44 Double cascoding. Microelectronic Circuits - Fifth Edition Sedra/Smith

  49. Figure 6.45 The folded cascode. Microelectronic Circuits - Fifth Edition Sedra/Smith

  50. Figure 6.46 BiCMOS cascodes. Microelectronic Circuits - Fifth Edition Sedra/Smith

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