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Pinhole Studies (not final)

Pinhole Studies (not final). Creation of defined number of pinholes per chip Increase of leakage current according to LHC years also defines the voltage over the dielectric (with Rpoly= 1.8MOhm) Effect of pinholes on readout Gain vs. number of pinholes??

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Pinhole Studies (not final)

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  1. Pinhole Studies (not final) • Creation of defined number of pinholes per chip • Increase of leakage current according to LHC years also defines the voltage over the dielectric (with Rpoly= 1.8MOhm) • Effect of pinholes on readout • Gain vs. number of pinholes?? • Gain vs. leakage current (= years of LHC operation) • Conclusion Preliminary F. Hartmann IEKP - Universität Karlsruhe (TH) IEKP - Universität Karlsruhe (TH)

  2. Power Consumption P ~ UFD I ~ d2 d ~d3 60mA/cm3 Ileak(-10°C)= 270mA (W6b)540µA (module)  P(500V, -10°C)=135mW/sensor IEKP - Universität Karlsruhe (TH)

  3. bond Al AC SiO2 P+ DC Setup Array of IR LED for cont. illumination  increase in total current with standard reverse bias. Bonding artificial pinholes on purpose! • Ichannel=Itot / #channel=Itot/1024 • Vdrop=Istrip*Rpoly = Istrip*1.8MOhm • 300µA/1024 *1.8MOhm= 0.5V • 30µA=0.05V • ... IEKP - Universität Karlsruhe (TH)

  4. Noise vs. leakage current Vb=500V; Il=0.3µA Vb=500V; Il=30µA Vb=500V; Il=300µA • Pinholes highly leakage current dependent • Very difficult to tag at starting current level IEKP - Universität Karlsruhe (TH)

  5. Pedestals vs. leakage current NO change Vb=500V; Il0.3µA Vb=500V; Il 30µA Vb=500V; Il 120µA Vb=500V; Il 300µA IEKP - Universität Karlsruhe (TH)

  6. Gain vs. leakage current (calibration) (Vbias=500V) (5&6 pinholes) Il 0,3µA ph 330 Il 30µA (Vdrop=0.05V) ph 300 p Preliminary p Il 60µA ph 280 Il 90µA ph 260 p p p p IEKP - Universität Karlsruhe (TH)

  7. Gain vs. leakage current (calibration) (Vbias=500V) (5&6 pinholes) Il 150µA ph 255 Il 240µAph 255 Preliminary Il 300µA (0.5V) ph 255 No change in gain at leakage currents above 150µA (up to 300µA) ?? IEKP - Universität Karlsruhe (TH)

  8. Calibration/Gain Vbias=500V; Il 60µA (Vdrop=0.1V) No pinholes 3 pinholes 4 pinholes p p IEKP - Universität Karlsruhe (TH)

  9. Common mode 0 pinholes Vbias = 400V Il = 200µA 10 pinholes IEKP - Universität Karlsruhe (TH)

  10. Conclusion • We bonded up to 10 pinholes per chip and imposed a current of 300µA/modules (330nA/channel; Vdrop = 0.5V) ~ 5 years of LHC operaton. • No saturation of chip seen; but final current level not yet reached. Only 300µA instead of 500-600µA • Gain loss and change in common mode with increasing leakage current and number of pinholes • Pinholes easy to tag with high current. IEKP - Universität Karlsruhe (TH)

  11. IV-Curve before/after Irrad. IEKP - Universität Karlsruhe (TH)

  12. IEKP - Universität Karlsruhe (TH)

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