Lecture 12.0. Deposition. Materials Deposited. Dielectrics SiO2, BSG Metals W, Cu, Al Semiconductors Poly silicon (doped) Barrier Layers Nitrides (TaN, TiN), Silicides (WSi 2 , TaSi 2 , CoSi, MoSi 2 ). Deposition Methods. Growth of an oxidation layer Spin on Layer
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Contours = Concentration
SiH2Cl2(g) + 2 N2O(g) SiO2(s)+ 2 N2(g)+2 HCl(g)
How to solve? Higher T at exit!
Thiele Modulus Φ1=(2kRw/DABx)1/2
This is bad!!!
Ishii, H. and Takahashik Y., J. Electrochem. Soc. 135,1539(1988).
RF + DC field
Poly Crystalline Columnar StructureSputtering Chemistries