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CMOS Technology Characterization for Analog and RF Design. Author : Behzad Razavi Presenter : Kyungjin Yoo. Index. Introduction Motivation and Issues Characterization for analog design Characterization for RF design. Introduction. CMOS: inadequate for analog and RF design?

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cmos technology characterization for analog and rf design

CMOS Technology Characterizationfor Analog and RF Design

Author : Behzad Razavi

Presenter : Kyungjin Yoo

index
Index
  • Introduction
  • Motivation and Issues
  • Characterization for analog design
  • Characterization for RF design
introduction
Introduction
  • CMOS: inadequate for analog and RF design?
    • Limited active, passive devices
    • Optimized technology for digital design
    • Poor characterization and modeling
  • Sophisticated set of characteristics
    • speed, noise, linearity, loss, matching, and dc characteristics
  • Technology characterization methods
motivation and issues
Motivation and Issues
  • Tradeoff difference
    • digital CMOS technology vs. analog circuits

speed  power dissipation

motivation and issues1
Motivation and Issues
  • Need for analog characterization
    • Inaccurate modeling, lack of modeling
    • Rapid migration of digital circuits
  • Difficulties
    • Various systems
    • Difficult to measure
    • Difficult to incorporate in simulations
    • Time and effort
    • Modification for next generation
characterization for analog design
Characterization for analog design
  • DC Behavior
  • AC Behavior
  • Linearity
  • Matching
  • Temperature Dependent
  • Noise
dc behavior
DC Behavior
  • Have measured I-V data points
  • Subthreshold characteristics of MOSFET
  • Output resistance of short-channel MOS transistors
ac behavior
AC Behavior
  • device level
    • and must be measured under bias conditions
    • Nonlinearity of MOS gate-channel capacitance
    • Capacitance of the n-well to the substrate
  • circuit level
    • Frequently used building blocks as test vehicles (e.g. ring oscillators)
    • Voltage comparator for intrinsic speed of the technology
linearity
Linearity
  • Passive devices
    • .
    • Coefficients must be measured
  • Active devices
    • Minimize the nonlinearity by adequate open-loop gain
    • Quantify the overall nonlinearity using Fig.10
temperature dependence
Temperature Dependence
  • Basic device parameters
    • Output resistance, subthreshold conduction, capacitance
  • Other quantities
    • Transconductance, on-resistance, threshold voltage, ac properties
  • DC and AC temperature dependencies of devices must be measured and incorporated in simulations
characterization for rf design
Characterization for RF design
  • Device Properties
  • Noise
  • Circuit Properties
device properties
Device Properties
  • Limit active devices, More passive monolithic devices
  • Inductors - measured data for parameters
  • Varactors
  • Transformers
noise
Noise
  • Thermal noise of submicrometer MOS transistor long-channel approximation
    • Capacitive coupling of the drain noise current to the gate
    • Modulation of the threshold voltage by the body thermal noise
  • 1/f noise of MOSFET’s
  • Values to be measured

are too small to be sensed

circuit properties
Circuit Properties
  • Dependent on
    • Overall transceiver architecture
    • Intended wireless standard
  • Issues in today’s RF CMOS design
    • Variability of device and circuit parameters with process and temperature
    • Matching properties
    • Frequency divider
    • Power Amplifiers