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Semiconductor Device Modeling and Characterization – EE5342 Lecture 10– Spring 2011. Professor Ronald L. Carter ronc@uta.edu http://www.uta.edu/ronc/. First Assignment. e-mail to listserv@listserv.uta.edu In the body of the message include subscribe EE5342

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semiconductor device modeling and characterization ee5342 lecture 10 spring 2011

Semiconductor Device Modeling and Characterization – EE5342 Lecture 10– Spring 2011

Professor Ronald L. Carter

ronc@uta.edu

http://www.uta.edu/ronc/

first assignment
First Assignment
  • e-mail to listserv@listserv.uta.edu
    • In the body of the message include subscribe EE5342
  • This will subscribe you to the EE5342 list. Will receive all EE5342 messages
  • If you have any questions, send to ronc@uta.edu, with EE5342 in subject line.
second assignment
Second Assignment
  • Submit a signed copy of the document that is posted at

www.uta.edu/ee/COE%20Ethics%20Statement%20Fall%2007.pdf

additional university closure means more schedule changes
Additional University Closure Means More Schedule Changes
  • Plan to meet until noon some days in the next few weeks. This way we will make up for the lost time. The first extended class will be Monday, 2/14.
  • The MT changed to Friday 2/18
  • The P1 test changed to Friday 3/11.
  • The P2 test is still Wednesday 4/13
  • The Final is still Wednesday 5/11.
mt and p1 assignment on friday 2 18 11
MT and P1 Assignment on Friday, 2/18/11
  • Quizzes and tests are open book
    • must have a legally obtained copy-no Xerox copies.
    • OR one handwritten page of notes.
    • Calculator allowed.
  • A cover sheet will be published by Wednesday, 2/16/11.
ideal junction theory
Ideal JunctionTheory

Assumptions

  • Ex = 0 in the chg neutral reg. (CNR)
  • MB statistics are applicable
  • Neglect gen/rec in depl reg (DR)
  • Low level injections apply so that dnp < ppo for -xpc < x < -xp, and dpn < nno for xn < x < xnc
  • Steady State conditions
slide7

q(Vbi-Va)

Imref, EFn

Ec

EFN

qVa

EFP

EFi

Imref, EFp

Ev

x

-xpc

-xp

xn

xnc

0

Forward Bias Energy Bands

slide12

Ideal JunctionTheory (cont.)

Apply the Continuity Eqn in CNR

slide16

Carrier Injection

ln(carrier conc)

ln Na

ln Nd

ln ni

~Va/Vt

~Va/Vt

ln ni2/Nd

ln ni2/Na

x

xnc

-xpc

-xp

xn

0

ideal diode equation
Ideal diodeequation
  • Assumptions:
    • low-level injection
    • Maxwell Boltzman statistics
    • Depletion approximation
    • Neglect gen/rec effects in DR
    • Steady-state solution only
  • Current dens, Jx = Js expd(Va/Vt)
    • where expd(x) = [exp(x) -1]
ideal diode equation cont
Ideal diodeequation (cont.)
  • Js = Js,p + Js,n = hole curr + ele curr

Js,p = qni2Dp coth(Wn/Lp)/(NdLp) = qni2Dp/(NdWn), Wn << Lp, “short” = qni2Dp/(NdLp), Wn >> Lp, “long”

Js,n = qni2Dn coth(Wp/Ln)/(NaLn) = qni2Dn/(NaWp), Wp << Ln, “short” = qni2Dn/(NaLn), Wp >> Ln, “long”

Js,n << Js,p when Na >> Nd

slide22

Diffnt’l, one-sided diode conductance

ID

Static (steady-state) diode I-V characteristic

IQ

Va

VQ

slide24

Charge distr in a (1-sided) short diode

dpn

  • Assume Nd << Na
  • The sinh (see L12) excess minority carrier distribution becomes linear for Wn << Lp
  • dpn(xn)=pn0expd(Va/Vt)
  • Total chg = Q’p = Q’p = qdpn(xn)Wn/2

Wn = xnc- xn

dpn(xn)

Q’p

x

xn

xnc

slide25

Charge distr in a 1-sided short diode

dpn

  • Assume Quasi-static charge distributions
  • Q’p = Q’p = qdpn(xn)Wn/2
  • ddpn(xn) = (W/2)* {dpn(xn,Va+dV) - dpn(xn,Va)}

dpn(xn,Va+dV)

dpn(xn,Va)

dQ’p

Q’p

x

xnc

xn

references
References
  • *Fundamentals of Semiconductor Theory and Device Physics, by Shyh Wang, Prentice Hall, 1989.
  • **Semiconductor Physics & Devices, by Donald A. Neamen, 2nd ed., Irwin, Chicago.
  • M&K = Device Electronics for Integrated Circuits, 3rd ed., by Richard S. Muller, Theodore I. Kamins, and Mansun Chan, John Wiley and Sons, New York, 2003.
  • 1Device Electronics for Integrated Circuits, 2 ed., by Muller and Kamins, Wiley, New York, 1986.
  • 2Physics of Semiconductor Devices, by S. M. Sze, Wiley, New York, 1981.
  • 3 Physics of Semiconductor Devices, Shur, Prentice-Hall, 1990.