Lecture 4. OUTLINE PN Junction Diodes Electrostatics Capacitance I/V Reverse Breakdown Large and Small signal models Reading: Chapter 2.2-2.3,3.2-3.4. Energy Band Description. PN Junction under Reverse Bias .
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Reading: Chapter 2.2-2.3,3.2-3.4
edge of depletion region
Equilbrium concentration of electrons on the P side:
Ln electron diffusion length (cm)
“Ideal diode” equation:
esi 10-12 F/cm is the permittivity of silicon.
source with value VD,on.
(or Dynamic Resistance)