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2006 updates to the Lithography chapter of the ITRS

2006 updates to the Lithography chapter of the ITRS. Lithography International Technology Working Group Meeting April 2006. Lithography Potential Solutions. 193nm Immersion Double Exposure / Double Patterning 32nm HP: change 193nm Innovative Solution to “193i Double Patterning”

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2006 updates to the Lithography chapter of the ITRS

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  1. 2006 updates to the Lithography chapter of the ITRS Lithography International Technology Working Group Meeting April 2006

  2. Lithography Potential Solutions • 193nm Immersion Double Exposure / Double Patterning • 32nm HP: change 193nm Innovative Solution to “193i Double Patterning” • Multiple versions of double (triple?) patterning exist • Double exposure (one resist, one etch) • Double patterning (one etch, two resists or one magic resist) • New lines in tables with new / tighter specs • New difficult challenges for double patterning • Overlay (mask and on-wafer) • Availability of software to split designs • High productivity multiple exposure cluster (scanner and track) • Performance of resists with memoryless capability and/or reduced sensitivity to flare and sidelobes • Fab logistics / cycle time / and impact to APC • Potential concern for CoO (two masks, reduced productivity) Manufacturable solutions not known ?

  3. Other Updates • CD Uniformity • Decision that current definition of Litho CD uniformity already includes a level of APC • 12% CDU remains red at 2007 for ITRS 2005 roadmap, <2.8nm (3s) not achievable • Litho to revisit inputs to 2003 CD uniformity simulation study that concluded <4nm (3s) CDU is difficult to achieve • Not likely to significantly change CDU results • Discussion with Design / PIDS / FEP may indicate that litho definition of CDU may be pessimistic • Restricted pitches and orientation would reduce litho variability • Overlay remains at 20% of Flash ½ pitch (2005 update) • Concern that large overlay structures may print differently than device features • Mask tables • Will be updated for color based on industry data • 193nm Water based Immersion defects • No significant new defects identified or defect inspection metrology required • Scanner field size • Maximum field size and reduction ratio may need to be revisited if >1.6NA immersion option is realized • If mask capabilities are not improved, this may also drive higher reduction ratio

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