Back contact materials of CIGS solar cell
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Back contact materials of CIGS solar cell. Contact resistance Diffusion & Reaction Price. Electrical properties of MoSe 2. Parallel to c-axis 3690 Ω∙ cm 1 μ m – 0.37 Ω∙ cm 2. Perpendicular to c-axis 2.5 Ω∙ cm 1 μ m – 0.00025 Ω∙ cm 2. Ohmic contact. Ohmic contact.

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Back contact materials of CIGS solar cell

  • Contact resistance

  • Diffusion & Reaction

  • Price


Electrical properties of MoSe2

  • Parallel to c-axis

  • 3690Ω∙cm

  • 1μm – 0.37Ω∙cm2

  • Perpendicular to c-axis

  • 2.5Ω∙cm

  • 1μm – 0.00025Ω∙cm2


Ohmic contact


Ohmic contact

Advantage : Electron barrier formation

Disadvantage : Schottky barrier



Metal-selenium reaction

No selenide formation on Ni or Ni/Mo

Diffusion barrier (native nickel oxide layer)




Sodium effect

Sodium selenide serves role of selenium reservoir


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