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Lecture 28

Lecture 28. OUTLINE The BJT (cont’d) Small-signal model Cutoff frequency Transient (switching) response Reading : Pierret 12; Hu 8.8-8.9. Small-Signal Model. Common-emitter configuration, forward-active mode:. R. F. Pierret , Semiconductor Device Fundamentals , Fig.12.1(a).

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Lecture 28

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  1. Lecture 28 OUTLINE The BJT (cont’d) • Small-signal model • Cutoff frequency • Transient (switching) response Reading: Pierret 12; Hu 8.8-8.9

  2. Small-Signal Model Common-emitter configuration, forward-active mode: R. F. Pierret, Semiconductor Device Fundamentals, Fig.12.1(a) “hybrid pi” BJT small signal model: Transconductance: EE130/230A Fall 2013 Lecture 28, Slide 2

  3. Small-Signal Model (cont.) where QF is the magnitude of minority-carrier charge stored in the base and emitter regions forward transit time EE130/230A Fall 2013 Lecture 28, Slide 3

  4. Example A BJT is biased at IC = 1 mA and VCE = 3V. bdc = 90, tF = 5ps, T = 300K. Find (a) gm , (b) rp , (c) Cp .Solution: (a)(b) rp = bdc / gm= 90/0.039 = 2.3 kW (c) EE130/230A Fall 2013 Lecture 28, Slide 4

  5. Cutoff Frequency, fT The cutoff frequency is defined to be the frequency (f = w/2p) at which the short-circuit a.c. current gain equals 1: EE130/230A Fall 2013 Lecture 28, Slide 5

  6. For the full BJT equivalent circuit: fT is commonly used as a metric for the speed of a BJT. Si/SiGe HBT by IBM To maximize fT: • increase IC • minimize CJ,BE, CJ,BC • minimize re, rc • minimize tF EE130/230A Fall 2013 Lecture 28, Slide 6

  7. Base Widening at High IC: Kirk Effect • At very high current densities (>0.5mA/mm2), the density of mobile charge passing through the collector depletion region exceeds the ionized dopant charge density: For a NPN BJT: increasing IC  The base width (W) is effectively increased (referred to as “base push out”)  tF increases and hence fT decreases. • This effect can be avoided by increasing NC increased CJ,BC , decreased VCE0 EE130/230A Fall 2013 Lecture 28, Slide 7 C. C. Hu, Modern Semiconductor Devices for Integrated Circuits, Figure 8-18

  8. Summary: BJT Small Signal Model Hybrid pi model for the common-emitter configuration, forward-active mode: EE130/230A Fall 2013 Lecture 28, Slide 8

  9. BJT Switching - Qualitative R. F. Pierret, Semiconductor Device Fundamentals, Figs. 12.3-12.4 EE130/230A Fall 2013 Lecture 28, Slide 9

  10. Turn-on Transient Response • The general solution is: • Initial condition: QB(0)=0 since transistor is in cutoff where IBB=VS/RS EE130/230A Fall 2013 Lecture 28, Slide 10 R. F. Pierret, Semiconductor Device Fundamentals, Fig. 12.5

  11. Turn-off Transient Response • The general solution is: • Initial condition: QB(0)=IBBtB EE130/230A Fall 2013 Lecture 28, Slide 11 R. F. Pierret, Semiconductor Device Fundamentals, Fig. 12.5

  12. Reducing tB for Faster Turn-Off • The speed at which a BJT is turned off is dependent on the amount of excess minority-carrier charge stored in the base, QB, and also the recombination lifetime, tB. • By reducing tB, the carrier removal rate is increased Example: Add recombination centers (Au atoms) in the base EE130/230A Fall 2013 Lecture 28, Slide 12

  13. Schottky-Clamped BJT • When the BJT enters the saturation mode, the Schottky diode begins to conduct and “clamps” the C-B junction voltage at a relatively low positive value.  reduced stored charge in quasi-neutral base EE130/230A Fall 2013 Lecture 28, Slide 13 R. F. Pierret, Semiconductor Device Fundamentals, Fig. 12.7

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