'Ingaas' presentation slideshows

Chapter 2. Basic Semiconductor Physics

Chapter 2. Basic Semiconductor Physics. 9/12/2008. 2.1 Introduction. Si, GaAs, InP: the published experimental and theoretical values of certain parameters differ considerably from reference to reference. Even worse for less matured materials (e.g., SiC or GaN), alloys and strained layers.

2.69k views • 76 slides

Introduction

Introduction. Semiconductor Physics. Introduction: Semiconductor Physics. Silicon bond model: electrons and holes Generation and recombination Thermal equilibrium Intrinsic semiconductor Extrinsic semiconductor. Silicon Bond Model: Electrons and Holes .

732 views • 26 slides

Introduction

Introduction. Semiconductor Physics. Introduction: Semiconductor Physics. Silicon bond model: electrons and holes Generation and recombination Thermal equilibrium Intrinsic semiconductor Extrinsic semiconductor. Silicon Bond Model: Electrons and Holes .

475 views • 26 slides

Workshop on uncertainties in radiation thermometry Paris, September 7, 2001

Workshop on uncertainties in radiation thermometry Paris, September 7, 2001. The size-of-source effect (SSE) and its influence on the uncertainties in radiation thermometry M.Battuello Istituto di Metrologia G.Colonnetti ( IMGC), Italy. Istituto di Metrologia G.Colonnetti.

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Performance Evaluation of 50 nm In 0.7 Ga 0.3 As HEMTs For Beyond-CMOS Logic Applications

Performance Evaluation of 50 nm In 0.7 Ga 0.3 As HEMTs For Beyond-CMOS Logic Applications. D.-H. Kim and J. A. del Alamo MIT. J.-H. Lee and K.-S. Seo Seoul National University. Sponsors: MARCO-MSD, TND Acknowledgement: MBE Technology. IEDM December 14, 2005. Contents. Introduction

479 views • 22 slides

Photovoltaics Continued: Chapter 14 10 March 2014

Photovoltaics Continued: Chapter 14 10 March 2014. Conduction band. E C. Photon. E g. E F. E V. Valence band. Photon Emission in Semiconductor. When an electron meets a hole, it falls into a lower energy level, and releases energy in the form of a photon.

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The Versatile Transceiver Feasibility Demonstration (Project phase II update)

358 views • 20 slides

Avalanche Photodiode Characterization

Avalanche Photodiode Characterization. David Hutchinson Semiconductor Devices and Models I Mid-Term Presentation - 10/14/2010. Impact Ionization. Multiplication Factor. For low frequency and equal ionization coefficients the multiplication is: M=1/(1- ? W d )

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MASCS Instrument & VIRS Calibration

229 views • 9 slides

The YL2000 FTIR

The YL2000 FTIR. YL2000 FTIR Features. General - A low cost and compact design of the YL2000 ensures High performance. - The YL2000 measures just 59 X 39 X 19 cm. - Optical design, software and firmware designed specifically reduce overall analytical times significantly.

547 views • 8 slides