'Gate oxide' presentation slideshows

EE 4345 Semiconductor Electronics Design Project

EE 4345 Semiconductor Electronics Design Project. CMOS Process Mohammad Butt Ahmad Elmardini Devices Heithem Souissi Dina Miqdadi Process Extension Fares Alnajjar Wyatt Sullivan. CMOS Process. Drawbacks of Metal-gate MOS Transistors.

866 views • 52 slides

EE 587 SoC Design & Test

EE 587 SoC Design & Test. Partha Pande School of EECS Washington State University pande@eecs.wsu.edu. SoC Physical Design Issues Power and Clock Distribution. Overview. Reading HJS - Chapter 11 Power Grid and Clock Design For background information refer to chapter 5 of the text book.

743 views • 41 slides

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Factors Affecting use of CCDs for Precision Astronomy

Factors Affecting use of CCDs for Precision Astronomy. Andrew Holland , Neil Murray, Konstantin Stefanov. Talk Summary. Missions we are working on : Gaia (2013) (precision Astrometry) Euclid (2020) (weak lensing though accurate PSF shape measurement)

485 views • 40 slides

Power Issues in Embedded Systems

570 views • 39 slides

Z. Celik-Butler and M. S. Rahman

Degradation in MOSFET Multi-Stack High-k Gate Dielectrics Due to Hot Carrier and Constant Voltage Stress. Z. Celik-Butler and M. S. Rahman. The Nanotechnology Research and Teaching Facility, Electrical Engineering Department University of Texas at Arlington, Arlington, TX 76019.

594 views • 39 slides

Lecture 21 I DDQ Current Testing

Lecture 21 I DDQ Current Testing. Definition Faults detected by I DDQ tests Vector generation for I DDQ tests Full-scan Quietest Instrumentation difficulties Sematech study Limitations of I DDQ testing Summary. Motivation.

571 views • 39 slides

Memory Technology 15-213 Oct. 20, 1998

Memory Technology 15-213 Oct. 20, 1998. Topics Memory Hierarchy Basics Static RAM Dynamic RAM Magnetic Disks Access Time Gap. class17.ppt. disk. Disk. Computer System. Processor. Reg. Cache. Memory-I/O bus. I/O controller. I/O controller. I/O controller. Memory. Display.

451 views • 36 slides

A systematic procedure for the development of hardened technology: application to the I3T80-HR

651 views • 36 slides

Electrically driven phenomena in ferroelectric materials Alexei Grigoriev

Electrically driven phenomena in ferroelectric materials Alexei Grigoriev The University of Tulsa. February 22, Wichita State University. Motivation Challenges Experimental Approaches Results Summary. Electric-field driven phenomena. electrophoresis. electrostriction.

636 views • 34 slides

CNT devices

CNT devices. Since their first discovery and fabrication in 1991, CNTs have received considerable attention because of the prospect of new fundamental science and many potential applications. Avouris, IBM. Stretching. And confined deformation.

344 views • 25 slides

Fabrication Technology(1)

Fabrication Technology(1). nMOS Fabrication CMOS Fabrication p-well process n-well process twin-tub process. Fabrication Technology(2). All the devices on the wafer are made at the same time After the circuitry has been placed on the chip

925 views • 24 slides

Process Variability

Process Variability. EE/MatE 167 David Wahlgren Parent. Introduction. Fabricator to Fabricator Variation: The differences in SPC data from fab house to fab house If you use the same fab house every time, you can optimize your design for one set of SPC data

542 views • 23 slides

ECSE-6230 Semiconductor Devices and Models I Lecture 18

ECSE-6230 Semiconductor Devices and Models I Lecture 18. Prof. Shayla Sawyer Bldg. CII, Rooms 8225 Rensselaer Polytechnic Institute Troy, NY 12180-3590 Tel. (518)276-2164 Fax. (518)276-2990 e-mail: sawyes@rpi.edu. August 16, 2014. sawyes@rpi.edu www.rpi.edu/~sawyes/courses.html. 1.

452 views • 20 slides

Miniaturizing Computers: Evolution of Processors

Miniaturizing Computers: Evolution of Processors. Past. Matt Cohen Chris Rousset Abdallah Rahman. Present. The Processor.

315 views • 19 slides

CEG3470 REVISION LECTURE (Some slides from Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response)

CEG3470 REVISION LECTURE (Some slides from Introduction to CMOS VLSI Design Lecture 4: DC & Transient Response). David Harris Harvey Mudd College Spring 2004. Outline. Transistor capacitances Transistor properties (current & capacitance vs size & voltage)

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Single-Electron Memory

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Gate Oxide Integrity And Microloading Characterization of 300mm Process Tools

Gate Oxide Integrity And Microloading Characterization of 300mm Process Tools. Abstract author: K. Mautz Motorola, Semiconductor Products Sector. Wei Yan 09-26-02. Introduction . Characterizations on gate oxide integrity from 300mm diffusion furnaces

151 views • 12 slides

Augustin Cauchy

645 views • 10 slides

The 2 th International Conference on Advanced Electromaterials (ICAE 2013)

The 2 th International Conference on Advanced Electromaterials (ICAE 2013).

142 views • 1 slides