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Fast position resolution silicon detectors

Fast position resolution silicon detectors

Fast position resolution silicon detectors. Gregor Kramberger , DESY. OUTLINE General properties of position sensitive detectors Column Parallel CCD (CPCDD) Monolithic Active Pixel Detectors (CMOS imager) Depleted Field Effect Transistor Detectors (DEPFET)

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562 views • 38 slides
Fast position resolution silicon detectors

Fast position resolution silicon detectors

Fast position resolution silicon detectors. Gregor Kramberger , DESY. OUTLINE General properties of position sensitive detectors Column Parallel CCD (CPCDD) Monolithic Active Pixel Detectors (CMOS imager) Depleted Field Effect Transistor Detectors (DEPFET)

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383 views • 38 slides
First results on electric field distribution in irradiated epi-Si detectors

First results on electric field distribution in irradiated epi-Si detectors

First results on electric field distribution in irradiated epi-Si detectors. E. Verbitskaya, V. Eremin, Ioffe Physico-Technical Institute of Russian Academy of Sciences St. Petersburg, Russia A. Macchiolo Max-Planck-Institut fuer Physik , Munich. 11 RD50 Collaboration Workshop

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303 views • 20 slides
CMS tracker upgrade test beam activities

CMS tracker upgrade test beam activities

CMS tracker upgrade test beam activities. Panja Luukka. Silicon Beam Telescope (SiBT) Group. Since 2007 a collaboration of several CMS institutes has been operating a silicon micro-strip beam telescope based on the CMS Tracker readout.

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277 views • 14 slides
Type inversion of Epi-Si and Cz irradiated devices

Type inversion of Epi-Si and Cz irradiated devices

Type inversion of Epi-Si and Cz irradiated devices. 50 m m thick epi-Si sensors, 50 W cm. CERN scenario experiment. Fixed fluence. protons and neutrons. protons. Points correspond to MAXIMUM of V fd and not to the minimum like in DOFZ devices.

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206 views • 11 slides
CCE measurements with Epi-Si detectors

CCE measurements with Epi-Si detectors

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196 views • 11 slides
Type inversion of Epi-Si and Cz irradiated devices

Type inversion of Epi-Si and Cz irradiated devices

Type inversion of Epi-Si and Cz irradiated devices. 50 m m thick epi-Si sensors, 50 W cm. CERN scenario experiment. Fixed fluence. protons and neutrons. protons. Points correspond to MAXIMUM of V fd and not to the minimum like in DOFZ devices.

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123 views • 11 slides

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