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Probing the Tunnel Density of States with Magnetic Junctions

Probing the Tunnel Density of States with Magnetic Junctions. Daniel C. Ralph, Cornell University, ECCS 0335 765. Deposition and subtractive processing are used to make both contact pads for magnetic tunnel junctions and the MTJs themselves.

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Probing the Tunnel Density of States with Magnetic Junctions

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  1. Probing the Tunnel Density of States with Magnetic Junctions Daniel C. Ralph, Cornell University, ECCS 0335765 Deposition and subtractive processing are used to make both contact pads for magnetic tunnel junctions and the MTJs themselves. The goals of the MTJ studies are to measure DOS effects on tunneling using differential conductance measurements in single MTJs and spin injection in double MTJs. The differential conductance feature observed in Ni-backed tunnel junctions potentially could be used as a reference marker for more involved studies into the nature of quantum tunneling. A new process is currently underway for the fabrication of DMTJs through additive EBID processing to facilitate the manipulation of the center electrode of a DMTJ. E. Dan Dahlberg, Barry Costanzi, and Bern Youngblood, University of Minnesota, Chemical Engineering and Materials Science Work performed at University of Minnesota Nanofabrication Center

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