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Field-Effect Transistors Based on Chapter 11 of the textbook

The concept that forms the family of field-effect transistors, or FETs is that an external electric field may be used to vary the conductivity of a channel, causing the FET to behave either as a voltage controlled resistor or as a voltage-controlled current source.

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Field-Effect Transistors Based on Chapter 11 of the textbook

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  1. The concept that forms the family of field-effect transistors, or FETs is that an external electric field may be used to vary the conductivity of a channel, causing the FET to behave either as a voltage controlled resistor or as a voltage-controlled current source. FETs are the dominant family in today’s integrated electronics, and although these transistors come in several different configurations, it is possible to understand the operation of the different devices by focusing on one type. Field-Effect TransistorsBased on Chapter 11 of the textbook

  2. Figure 11.1 Classification of Field-Effect Transistors

  3. Figure 11.5 Drain Characteristic Curves for a Typical NMOS Transistor with VT = 2 V and K = 1.5 mA/V2

  4. Figure 11.6 The n-Channel Enhancement MOSFET Circuit and Drain Characteristic

  5. Figure 11.13 MOSFET Small-Signal Model

  6. N-Channel Enhancement Mode MOSFET

  7. iD-vDSCharacteristics

  8. Operation of the n-Channel Enhancement-Mode MOSFET

  9. Large-Signal Equivalent Circuit Model of the n-Channel MOSFET in Saturation.

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