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Contents. HistoryAdvantagesSiGe GenerationsPhysical PropertiesSi/SiGe Epitaxial-Base Transistors (ETx)DC CharacteristicsAC CharacteristicsReference. History. IBM\'s research to reach fT > 60 GHz back in the early 1980\'s.Need to reduce HBT\'s base length to enhance computing power.UHV/CVD LTE (1994).Ultra High Vacuum Chemical Vapor Deposition, Low temperature Epitaxy..

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