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EE235 Carbon Nanotube Flash Memory Devices. Volker Sorger. Motivation. Symptom. Source. Robert Chau et. al, Intel Novel-Device-Group, IEEE Nanotech. 2005 . G.; Fazio, A.; Mills, D.; Reaves B. Intel Technology J. Q4’97. Memories for Mobility. Non-volatile = low power needed

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Presentation Transcript
motivation
Motivation

Symptom

Source

Robert Chau et. al, Intel Novel-Device-Group,IEEE Nanotech.2005

G.; Fazio, A.; Mills, D.; Reaves B.Intel Technology J.Q4’97

memories for mobility
Memories for Mobility
  • Non-volatile = low power needed
    • power down to save power
  • Low cost
    • one memory for program & data storage
  • ≠magnetic hard disk
  • Small form factor & light in weight
cnt memory nanocrystals
CNT- Memory - Nanocrystals

tox=5nm

Id

‘1’

‘0’

Vg

Fit to

 t=800s @ 300K

Y. Zhang, APL, 2005

cnt memory si sio2 interface traps
CNT- Memory – Si/SiO2 interface traps

M. Radosavljevic, Nano Lett., 2002

Lack the ability to engineer Device parameters

cnt molecular memory
CNT Molecular Memory
  • Idea similar to floating gate Flash memory

Control Gate

Gate Oxide

Floating gate

tox~ 9 nm

Vsd~ 5 – 8 V

S

D

= ‘hot’ electrons

Control gate, Vp ~ 8V

S

D

Vsd= 0 V

Vp = 1 – 4 V

Control Gate

Low static & dynamic Power

slide10

charge dot (Rdot)

Pd

Pd

CNT

SiO2

p++ Si

Results  Sensitivity

0e

1e

2e

Channel conductance vs. the gate voltage

dCNT~1.0nm, Lch=200nm, tbot=110nm, Rdot=0.3nm,

Qdot=0,1e,2e

Vsd=0, VG=0.2V

  • Collaboration with
  • Y. Zhang – Intel
  • Jing Guo - Florida U.

Vth  0.28V per electron

conclusion
Conclusion
  • Multi-bit programmable
  • Single electron sensitivity at low T
  • Low power consumption
  • Integration (?)

~~~ Thank you for you attention ~~~

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