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Preparation of Mock tile MCPs 01042011

Preparation of Mock tile MCPs 01042011. Anil Mane, Qing Peng, Jeffrey Elam Argonne National Laboratory. Objective:. To prepare 8 workable MCPs for mock tile assembly Collect within batch MCPs resistance data for resistive coating ALD process

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Preparation of Mock tile MCPs 01042011

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  1. Preparation of Mock tile MCPs01042011 Anil Mane, Qing Peng, Jeffrey Elam Argonne National Laboratory

  2. Objective: • To prepare 8 workable MCPs for mock tile assembly • Collect within batch MCPs resistance data for resistive coating ALD process • Collect batch-to-batch MCPs resistance data for resistive coating ALD process Experimental: • Used 2 batch of 5 MCPs with NiCr electrode • Passivation (53A) • Resistive coating chemistry-2 (~800A) • SEE coating (53A)

  3. NiCr deposition at Fermi lab: NiCr electrode on 1st batch of 5 MCPs MCP# 125 126 127 128 129 NiCr electrode on 2nd batch of 5 MCPs MCP# 130 131 132 133 134 • One of the MCP holder has electrode exposure dimension issue

  4. MCPs placement prior to ALD in substrate loading tray MCP with NiCr electrode Before ALD MCP# 125 126 127 128 129 After ALD • Uniform deposition on monitors (quartz and Si(100)) as well as on all MCPs

  5. ALD coating thickness across the reactor • Thickness uniformity on monitor Si(100) <2% • The resistive layer thickness ~800A • Similar thickness trend observed on second batch of 5 MCPs •  Excellent batch-to-batch reproducibility

  6. I-V(-10V to +10V) Response in air for 10 MCPs Removed MCP 131 data • Linear I-V response for all MCPs • MCP 131 resistance is out of targeted value (Outlier) • Little scatter in I-V plot

  7. I-V(-100V to +100V) Response in vacuum (4e-3mbar) for 10 MCPs Removed MCP 131 data • Linear I-V response for all MCPs • MCP 131 resistance is out of targeted value • Little scatter in I-V plot

  8. I-V Comparison (air vs. vacuum) 9 MCPs I-V in Vacuum (4e-3mbar) I-V in Air -10V to +10V -100V to +100V • Linear I-V response for all MCPs • Very little change in I-V values • Little scatter in I-V plot • Electrical contact cause by electrode underneath? • Related to end spoiling ? • ALD chemistry composition across the reactor? • Electrode area ?

  9. Resistance Comparison for 9 MCPs (air vs. vacuum) • Very little change in average resistance ( air 111 M vs. vacuum 115 M) • Average resistance in vacuum = 115 ±12 M  ~10% resistance variation

  10. Resistance for 10 MCPs What's wrong with MCP# 131?

  11. Resistance for 10 MCPs • Cause for outlier (MCP131):

  12. Resistance for 10 MCPs • Gap in triple points can cause electrode • penetration and cause localize • low resistance regimes • Will affect greatly on 8”x8” MCP • Need minimum(?) defects on MCPs • Cause for outlier (MCP131):

  13. Summary • Prepared 10 MCPs with ALD resistive layer chemistry-2 and SEE (Al2O3) layer • Excellent resistive layer uniformity across the ALD reactor • Within batch good ALD layer reproducibility • Very good batch-to-batch reproducible of ALD process • All MCPs shows linear I-V response • Very little change in resistance of MCPs (Air vs. Vacuum) • Average resistance for MCP = 115M • Big gap @ triple point are responsible for outliers • NiCr electrode deposition need same dimension MCP holders • Will vary the total # of active pores (resistances)

  14. Next plan for Mock tile: • Selected 8 MCPs Gain test in APS test set-up • George and grid (A, B, & C) spacer resistance tuning • Resistance test on stack of [MCPs, George and & spacer (A, B, & C ) on Mock tile • Gain test at UCB (Prof. Ossy’s Lab)

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