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Laboratory Demo: Photo-Lithography

Laboratory Demo: Photo-Lithography. - Place the wafer in a tin plate. - To make sure that the wafer is completely dry, place the tin plate containing the wafer into the dehydration oven for 30 minutes to "Pre-Bake" it.

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Laboratory Demo: Photo-Lithography

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  1. Laboratory Demo: Photo-Lithography

  2. - Place the wafer in a tin plate.

  3. - To make sure that the wafer is completely dry, place the tin plate containing the wafer into the dehydration oven for 30 minutes to "Pre-Bake" it.

  4. - Using teflon tweezers, place the wafer on the wafer chuck in the center of the Photoresist Spinner.

  5. - Using a Nitrogen Gun, blow the wafer surface to remove any dust particles.

  6. - Using an eye dropper, flood the wafer surface with primer to facilitate resist adhesion to substrate.

  7. - Press the spin button which will cause the wafer to spin at ~ 5000 rpm. Centrifugal force will cause excess primer to move away from the center until all wafer is primed and ready to accept resist. Then release spin button.

  8. - No photos could be taken while resist is applied since it is sensitive to light. Actually all lighting in the clean room is covered by yellow filters.

  9. - Give the resist a soft-bake in an oven at temperatures between 90 and 120 °C to semi-harden the resist. Meanwhile setup the mask aligner.

  10. - For each layer there is a separate mask (patterned glass).

  11. - Place the mask in the wafer holder so that the emulsion side of the mask is facing downward toward the wafer.

  12. - Slide the wafer holder into the mask aligner.

  13. - Tighten the two knobs to secure the wafer holder in place.

  14. - Bring the resist-covered wafer back from the soft-bake oven.

  15. - Carefully place the wafer on the wafer chuck of the aligner.

  16. - Carefully slide the wafer chuck into the aligner so that the wafer is positioned under the mask.

  17. - Slowly raise the lever so that the wafer comes into contact with the mask Then press the button marked “Separation” that will cause the wafer ~ 0.5 mm away from the mask without being scratched..

  18. - Adjust the microscope knobs as well as knobs (three) that allow you to move the wafer in horizontal and vertical directions.

  19. - Press expose button. A very bright light will come on inside the aligner. The exposure time is set according to the type of resist (~10 s)

  20. - The type of developer solution used is determined by the type of resist chosen.

  21. - Carefully place the wafer into a chemically resistant carrier.

  22. - Be sure to lock the wafer so that it is firmly secured.

  23. - Immerse the wafer in the developer for the recommended time ( ~ 30 s).

  24. - Immediately after plunge the wafer into the beaker filled with water to stop the development process.

  25. - Use a de-ionized water gun to completely clean the wafer.

  26. - Use nitrogen gun to thoroughly dry the wafer, front and back.

  27. - Inspect the wafer under the microscope to see if the patterns are clear and well defined.

  28. - If everything is OK , place the wafer in the hard-bake oven which should be preheated to the required temperature (120 - 140 °C).

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