1 / 11

3D Sensor FBK

3D Sensor FBK. FBK / INFN Roma, November , 17 th 2009 G. Darbo - INFN / Genova. ATLAS Pixel Detector. ATLAS Pixel Detector: 3 Barrel Layers + 3 forward and backward disks. 1744 modules with 16 chips (27904 FE-I3 chips) – 1.7 m 2 of active area. Present ATLAS Pixel Detector.

amber
Download Presentation

3D Sensor FBK

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. 3D Sensor FBK FBK / INFN Roma, November , 17th 2009 G. Darbo - INFN / Genova

  2. ATLAS Pixel Detector • ATLAS Pixel Detector: • 3 Barrel Layers + 3 forward and backward disks. • 1744 modules with 16 chips (27904 FE-I3 chips) – 1.7 m2 of active area

  3. Present ATLAS Pixel Detector • ATLAS Pixel Module • 1744 Modules x 16 FE-I3 chips • 16.8x60.4 mm2 • Sensor • n-in-n oxygenated • 1x1015 neqcm-2 • FE-I3 • 0.13µm CMOS • 3.5 million transistors

  4. ATLAS Pixel Pictures Bi-stave with 26 modules Layer2 half shell

  5. ATLAS Upgrade Plans: IBL 20.2mm 7.6mm ~200μm • Add a new layer of Pixel inside the present three layers of the detector: • 14 staves with 16 (or 32) double (single) chip modules. • Prototype 2010, production 2011÷12 • FE-I4 chip: ~2x2 cm, 250x50 µm pixel size 16.8mm ~19 mm active IBM reticule 8mm active 2.8mm ~2mm Chartered reticule (24 x 32) FE-I3 74% FE-I4 ~89% New FE-I4 Pixel size = 250 x 50 µm2 Pixels = 80 x 336 Technology = 0.13µm Power = 0.5 W/cm2 FE-I3

  6. FE-I4 • FE-I3 not suitable for IBL • ~7% inefficiency at 3.7 cm and L = 3x1034 cm-2s-1 • FE-I3 works at 50 Mrad, but has major faults at 100 Mrad • FEI4 design collaboration formed in 2007 between: • Bonn, CPPM, Genova, LBNL, NIKHEF • FE-I4_proto chip (3/08) • Main analog blocks (3x4mm2) • Irradiated to 200 Mrad: noise increase by 20% (ENC 100120 with 400fF load and IAVDD=10µA/pixel) FE-I3 Inefficiency

  7. IBL Requirements for Sensors/Electronics • Requirements for IBL (sensors/electronics) • IBL design Peak Luminosity = 3x1034 cm-2s-1 New FE-I4, higher hit rate • Integrated Luminosity seen by IBL = 550 fb-1 • Total NIEL dose (rmin=3.1cm): Φ1MeV = 3.1 x 1015 ± 30% (σpp) ± 50% (sensor damage factor) • Safety factor for IBL (60%)  design for 5 x 1015 neq/cm2 more rad-hard sensors • Total ionization dose (TID) > 200 Mrad • ATLAS Pixel Sensor/FE-I3 designed for 1015 neq/cm2 / 50 Mrad 1MeV and TID for integrated luminosity of 1000 fb-1 Ref. Ian Dawson – ATLAS IBL General Meeting (25-26 June 09)

  8. 3D Sensors - Test Beam • Jun.09 test beam: 1 ATLAS Pixel planar, 1 3D SINTEF/Stanford (full column), 2 FBK partial double columns (FBK 3EM5 has low breakdown @ 10V) • For inclined tracks 3D sensors have similar efficiency and spatial resolution as planar – No Lorentz angle effect in 3D sensor • Active edge (STA) show efficiency up to 5÷10µm from edge • Very good collaboration between all 3D sensor producers: • Two meetings (Jun’09, Sep’09) • They look for collaboration more than competition: better chances for IBL of having compatible 3D design in time! Ref.: O. Rohne – Vertex 2009

  9. Assemblies • Two options: module with two FE-I4 (2x4 cm2) for planar sensors or with single FE-I4 (2x2cm2) for 3D sensors • FE-I4 thickness: <350 µm (what is feasible? Prototyping with dummies) • Planar sensors thickness: 200÷300 µm • 3D sensor thickness: 230 ± 10 µm (are sensors with array of thin – 10 µm – columns, geometry similar to the FE-I3 tested assemblies) • 3D sensor could come with support wafer bonded – how can be removed after bump-deposition?

  10. ATLAS sLHC Upgrade • For sLHC, ATLAS foresee a complete replacement of the inner detector: • Replace the Pixel with a 4 or 5 pixel layers: 2 or 3 times the surface • The two internal layers (3xIBL surface) will need material engineering (3D) or new technology (diamond) to sustain radiation fluence (2x1016 neqcm-2) • Time scale: • Prototyping: 2010÷2012 • Production: 2013÷2014 (15) • IF 3D Sensors are proven IBLtechnology, theywill find their application in ATLAS & CMSat sLHC. Two layers of “new technology” pixels Silicon Pixel Detector

  11. Advantage of 3D vs planar • 3D sensor has several advantages over planar • More radiation hard: electrode spacing advantageous for charge collection respect to planar • More collected charge – in pixel front-end chips analog/digital crosstalk limits the lowering of threshold • Low bias voltage: 150 V vs >1000 V at high radiation dose • Low power: planar sensor need very low temperature to avoid thermal runaway • There is no Lorentz angle effect • … but the major disadvantage is a new technology • Require proof of production yield • When do we need prototypes for IBL? • FE-I4 will be submitted in March 2010 and prototype back in June • If the design is successful need sensors by mid 2010 (July) and test and irradiation in fall • Is this time schedule compatible with FBK? ….

More Related