2007 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal

1. 2007 International Technology Roadmap for Semiconductors Radio Frequency and Analog/Mixed-Signal Technologies for Wireless Communications Working Group ITRS Public Conference April 25 2007 Annecy, France

2. Wireless ITWG Scope • Use wireless IC as technology driver • Roadmap technical requirements, challenges and potential solutions for RF and AMS IC technologies in wireless applications such as cellular phones, WLAN, WPAN, automotive radar, phased array systems and other emerging standards • Address intersection of silicon with III-V compound semiconductors • 2007 Roadmap added MtM focus

3. Wireless ITWG Methodology • Communication System • Protocols/Standards • Frequencies 0.8 – 100GHz • Architecture • Circuit Figures-of-Merit • Dynamic Range, Bandwidth • Gain, Noise Figure, Linearity • Phase Noise • Output Power, Gain, PAE • Power Consumption • Device Figures-of-Merit • Mismatch, Gain • fT & fMAX • NFmin & 1/f noise • Breakdown • Quality factor, linearity • Power density, PAE • COST Wireless Roadmap

4. InP InP – – HBT, HEMT GaAs MEHMT HBT, HEMT GaAs MEHMT GaAs GaAs - - HBT, PHEMT HBT, PHEMT SiGe SiGe – – HBT, BiCMOS HBT, BiCMOS GaN GaN - - HEMT HEMT Si Si – – RF CMOS RF CMOS SiC SiC - - MESFET MESFET 0.8 GHz 0.8 GHz 2 GHz 2 GHz 5 GHz 5 GHz 10 GHz 10 GHz 28 GHz 28 GHz 77 GHz 77 GHz 94 GHz 94 GHz DCS DCS WLAN WLAN SAT TV SAT TV GSM GSM PDC PDC SAT SAT WLAN WLAN LMDS LMDS AUTO AUTO Contraband All Weather PCS PCS WLAN WLAN CDMA CDMA GPS GPS TV TV 802.11a 802.11a WLAN WLAN RADAR RADAR Detection 802.11b/g 802.11b/g Landing DECT DECT HomeRF ISM ISM SAT SAT All Weather Hyperlink Hyperlink Bluetooth CDMA CDMA UWB UWB Radio Radio Landing Bluetooth ZigBee Wireless Communication Application Spectrum Roadmap mm-Wave Tables Applications drive Noise Figure, Power, Power Added Efficiency, Linearity and Cost

5. 2007 Wireless ITWG Organization Pascal Ancey ST Micro Joost. Van Beek NXP Herbert Bennett NIST Pascal Chevalier ST Micro Julio Costa RFMD Stefaan Decoutere IMEC Erwin Hijzen NXP Digh Hisamoto Hitachi Wu-Jin Ho WIN Semi Dave Howard Jazz W. Margaret Huang Freescale Anthony Immorlica BAE Systems Andre Jansman NXP Snezana Jenei Infineon Jay John Freescale Alvin Joseph IBM Takahiro Kamei Oki Tom Kazior Raytheon Yukihiro Kiyota Sony Sebastian Liau ITRI Ginkou Ma ITRI Mel Miller Freescale Jan-Erik Mueller Infineon Hansu Oh Samsung Jack Pekarik IBM Marco Racanelli Jazz Bernard Sautreuil ST Micro Sam Shichijo TI Albert Wang IIT Chuck Weitzel Freescale Geoffrey Yeap Qualcomm Peter Zampardi Skyworks Bin Zhao Freescale Herbert Zirath Chalmers U John Zolper DARPA 2007 New members

6. 2007 Organization Chair: Margaret Huang, Freescale 34 Members /last year 27 Co-chairs: Jan-Erik Mueller, Infineon 18 US, 10 Europe, 6 AP Bin Zhao, Freescale Editor: Herbert Bennett, NIST • Subgroup CMOS Jack Pekarik, IBM • Subgroup Bipolar Marco Racanelli, Jazz • Subgroup Passives Sam Shichijo, TI • Subgroup PA Peter Zampardi, Skyworks Chuck Weitzel, Freescale • Subgroup mm-Wave Tony Immorlica, BAE Systems • Subgroup MEMS Dave Howard, Jazz

7. 2007 Wireless Requirement Tables • CMOS • Performance Analog CMOS • Continue linkage to Low STandby Power (LSTP) CMOS roadmap with 1 year lag (Supply Voltage, Tox, Gate length ) • RF&AMS parameters including: Ft/Fmax. Noise Fig, Gm/Gds, 1/f noise and Vt matching • Precision Analog CMOS • Thick gate oxide CMOS • No update for 2007 • New 2007, CMOS requirements for mmWave • Link to High Performance CMOS roadmap with 2 year lag • Added RF parameters: Ft/Fmax. Noise Fig @ 60GHz

8. 2007 Wireless Requirement Tables • Silicon Bipolar • 3 Separate Bipolar devices: • High Voltage – “typical” low-cost bipolar device for <10GHz wireless transceiver • High Speed – mm-Wave applications • PA – power amplifier applications • Focus on high speed and PA bipolar as drivers • 2007 reduce high speed device Ft scaling (delay 300Ghz by 1 yr and 500GHz by 5 yrs). Adjust Fmax, JC and BVCEO scaling accordingly. • Revised PA NPN parameters, aligned to PA battery voltage • On-Chip Passives • 3 applications: Analog, RF and Power Amplifier • Devices include: Capacitors, Resistors, Inductors, Varactors • 2007 add MOM RF capacitor

9. 2007 Wireless Requirement Tables • Power Amplifier • Handset : HBT & FET, III-V and Si • 2007 add end-of-life battery voltage, FET/HBT integration for integrated bias circuit design, on-chip switch integration (for stage by-passing). • Emerging markets driving PA to a cost/performance driven and a cost only driven applications. Cost-only market driving silicon single chip alternatives. • Base Station: Cellular and emerging WiMAX Required relatively high RF power, LDMOS & III-V FET • 2007 drop SiC device, displace by GaN device • mm-Wave • Dominated by III-V (GaAs MESFET, GaAs PHEMT, InP HEMT, GaAs MHEMT, GaN HEMT, InP HBT ), plus SiGe HBT and silicon NFET (2007) • Low noise amplifier and power devices

10. MtM Focus Multi-Standard Applications • Address multi-band, multi-mode, portable applications • Wideband amplifier with switching and filtering network • Add RFMEMS requirements • Focus on 4 elements: BAW, Resonator, Switch capacitive contact and Switch metal contact • Requirements in: Design tool, packaging, performance driver and cost driver • Considering adding Embedded Laminate Passives requirements

11. RFMEMS • Members from JAZZ, NXP, STM, Infineon and Freescale • Need to broaden membership • Focus on 4 elements: • BAW • Resonator • Switch capacitive contact and • Switch metal contact • Consider adding other wireless MEMS • Including gyro and microphone • Requirements in: • Design tool • Packaging • Performance driver and • Cost driver

12. Wireless Working Group Key Considerations • Traditional Roadmap Drivers: • Cost (scaling, die size, part count) • Power Consumption • Chip Functionality • Non-traditional Roadmap Drivers: • Government regulations determining system spectrum and specifications • Standards and protocols drive frequencies, power and performance • Production Volume – specialty foundries and captive applications • Cost / Performance Drives Integration: • Multi-band Multi-mode system applications (SiP Functionality) • RF modules, embedded passives, filter and T/R switch integration (MEMS) • Signal Isolation • Analog Shrink (power supply, area, design innovations)

13. Challenges and Trends • Radio Integration: • Performance and cost trade off for SoC vs SiP solution • Signal isolation - challenge to technologists, designers and EDA tool providers • CAD solution for Integrated Radio SiP design (chip, passive, MEMS, package, tool compatibility, model accuracies) • Device Technology: • Optimizing analog/RF CMOS devices with scaled technologies. Fundamental changes in CMOS device structure device may lead to the need of separate process/chip to support conventional precision analog/RF devices • Cost and performance tradeoff of integrating passive devices • Predictability of battery technology (end-of-life) and its impact on PA roadmap • Compound semiconductor substrate quality, reliability, new thermal management • Design: • Design approach for PA ruggedness • Digitizing analog functions, Software Define Radio (SDR)