SU-8 Testing (v1b)

1. SU-8 Testing (v1b) Thin SU8 on glass slide Test Soft Bake (SB) and Post Exposure Bake (PEB)

2. “Control” Recipe • Spin Coating: 10s @ 500rpm; 30s @ 2000rpm • (expected thickness?) • Soft Bake (SB): 60s @ 93°C • Exposure: 8s @ 275 W • PEB: 60s @ 93°C • Develop: 4min in SU8 developer • SU8 developer rinse • IPA rinse/Nitrogen Dry

3. 1st Set of Tests 4 samples; 8 devices/sample 4 Wells (W)+4 Blanks (B)/sample • S1: “Control”: Misaligned (how?); All shorted; R(W)~8.6Ω; R(B)~10Ω Test Parameters: SB (RT Evap for 30min) and Vary PEB time @ 60°C? • S2: 8min PEB: R(W)=(2.7±0.8)Ω; R(B)=11MΩ±0; C(B) = ?pF • S3: 13min PEB: R(W)=(4.9±?)Ω; R(B=(5.6±7.7)MΩ; C(B)=? ±? • S4: 15minPEB: R(W)=(3.8±1)Ω; R(B)=(11±0)MΩ; C(B)=? ±? • Cracking patterns seen in S2, S3, S4

4. 2nd set of test samples Summary • 4 samples • 2 “Controls” Test Parameters: 1 min PEB @ 93°C and Vary SB time @ 60°C • SB: 2.5 min • SB: 5 min

5. 2nd Test Results“Control 1” S5 Summary: W: 4/4 Shorted B: 3/4 Shorted R(Well): (12.1 ± 10) Ω Excluding #3 R(Blank): (158± 230) Ω Blank Capacitance: 9.38 pF

6. “Control 2” S6 Summary: W: 2/4 Shorted (2 Damaged by applying too high a voltage) B: 0/4 Shorted R(Well): (94± 68) Ω; C(Blank): (9.57± 0.5) pF

7. 2.5min SB S7 Summary: All Shorted R(Blank): 184.8± 211Ω R(Well): 8± 4.9Ω

8. 5min SB S8 Summary: W: 3/4 Shorted (why not 4/4?) B: 3/4 Shorted R(Blank): (30± 20)Ω (#8 excluded) R(Well): (3.7± 1.6) Ω 7*: Remeasured and same effect ignored in the average. Strange that there is a Capacitance and low Resistance, Remeasured C and still high

9. “Control 2” 20x

10. “Control 2” 100x

11. “Control1” 100x

12. 2.5min SB 100x

13. 5min SB 100x

14. S9 • Back Contact Broken no Resistances • Measured Capacitances • W: 2/4 Shorted B: 1/4 Shorted • Avg Capacitance Well: 19.3± 0.6pF

15. S10 Summary: W: 4/4 Shorted B: 4/4 Shorted Avg Well Resistance: 5.0± 1.2Ω Avg Blank Resistance: 96± 52Ω Double Exposed (16s)