ACSES – your partner in analyzing the nanoworld

1. ACSES – your partner in analyzing the nanoworld D. S. Karpuzov ACSES, CME-607, University of Alberta, Edmonton, AB, T6G 2G6 Samples of our recent data Instruments What is ACSES? High-resolution spectra Low-resolutionspectra • XPS Spectrometer AXIS 165 (Kratos) equipped with ISS, AES, SEM (operational) • XPS Imaging Spectrometer ULTRA (Kratos) with TPD, AES (to be commissioned in December 2003) • ToF SIMS iV (TOF-SIMS, to be commissioned in December 2003) • Universal System with MBE, EBE, QMB, HREELS, AES/LEED (SPECS, due in December 2003) • JAMP 9500F Auger Microprobe (Jeol, due in February 2004) • FTIR Spectrometer with controlled environment (in spring 2004) • STM/AFM microscope with environment control (in spring 2004) ACSES is the acronym for Alberta Centre for Surface Engineering and Science, an interdepartmental facility created jointly by the Faculty of Science and Faculty of Engineering at the University of Alberta ACSES Mission Our mission is to provide comprehensive surface characterization of materials for academics as well as R&D and industrial work in Western Canada Modification of C1s peak of poly-styrene and poly-methyl-methacrylate after treatment in plasma Broad spectrum of NiCo thin layer on Si Techniques • ACSES is committed to run the following techniques: • Surface analysis: • XPS (X-ray Photoelectron spectroscopy) • XPS imaging • AES (Auger Electron Spectroscopy) • SAM (Scanning Auger Microscopy) • Static SIMS (Secondary Ion Mass Spectroscopy) • ISS • HREELS • LEED • SEM • TPD • Surface FTIR • STM/AFM • Surface Treatment: • High temperature/pressure catalytic reactions • Film deposition by MBE and EB-evaporation How to reach us? For contact information and details about the instruments please visit our website www.ualberta.ca/ACSES Left – concentration report derived from the NiCo spectrum above, Right – lateral distribution of Ni for the same sample C-H (in blue), C-O (red), and C=O(pink) components in C1s spectrum of PET Our Sponsors Angular resolved XPS. From the well resolved peaks of Si-Si and Si-O the oxide thickness can be evaluated Depth profile of composition, MnO2/Pt/Si. 3 keV Ar beam, 45 degr. incidence. Etch rate 0.4 nm/min