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Carbon Nanotube Memory. Ricky Taing. Outline . Motivation for NRAM Comparison of Memory NRAM Technology Carbon Nanotubes Device Operation Evaluation Current State of NRAM Fabrication Conclusions. Motivations and Goals . Physical limitations of current memory

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Presentation Transcript
outline
Outline
  • Motivation for NRAM
    • Comparison of Memory
  • NRAM Technology
    • Carbon Nanotubes
    • Device Operation
    • Evaluation
  • Current State of NRAM
    • Fabrication
  • Conclusions
motivations and goals
Motivations and Goals
  • Physical limitations of current memory
    • Threshold voltage scaling, soft error
  • Low power for mobile devices
  • Universal memory
    • Fast, dense, non-volatile, low energy
comparison current tech
Comparison - Current Tech
  • Size compared to DRAM
  • Speed compared to SRAM
  • Energy compared to Flash
    • limited lifetime for flash
comparison future tech
Comparison - Future Tech
  • MRAM (Magnetic Memory)
    • Insulator separated magnetic plates
      • Changing polarity causes high or low resistance across insulator
    • size limit being reached, larger than flash
  • FRAM (Ferroelectric Memory)
    • replace capacitor with Ferroelectric crystal
    • in use
      • unlimited writes
      • smallest possible size larger than NRAM
  • Josephson based
nram technology
NRAM Technology
  • Carbon Nanotubes
    • cylindrical carbon molecules
    • extremely strong (52x carbon steel)
    • SWNT
      • conductors
      • composite fibers: 600 J/g to break
        • 4x spider silk, 18x Kevlar fiber
  • “Gecko strength”
    • 200x as sticky
nram technology2
NRAM Technology
  • Device Overview
nram technology3
NRAM Technology
  • On/Off States
    • Potential Energy
    • Van der Waals interactions
    • Keeps state w/o current
    • Threshold: 4.5V(on) and 20V(off)
nram technology4
NRAM Technology
  • Data Access
    • OFF: high resistance
    • ON: low resistance
    • 100GHz operations for 10nm element
nram technology5
NRAM Technology
  • Calculations
    • Stable at room temperature
    • States hold for a variety of sizes
    • Measurable resistance difference
    • Bending force will not strain strain SWNT
    • Small voltages
    • Localized interactions
nram technology6
NRAM Technology
  • Density
    • 10^12 elements/cm^2
  • Speed
    • current: 10x flash
fabrication
Fabrication
  • Work with fabrication companies
  • Current tech
    • Deposit nanotubes on chips
    • Remove wrongly placed ones
current state
Current State
  • Nantero
    • “Made ground in the manufacturing process”
  • Density
    • 13 cm circular wafers - 10GB
  • Future
    • Space memory / BAE
  • Problems?
    • fabrication
conclusion
Conclusion
  • Stable, unlimited lifetime, instant on/standby, scalable
  • “Universal”
  • NRAM prototype devices in 2006