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2011 清大電資院學士班

2011 清大電資院學士班. 「頂尖企業暑期實習」 經驗分享心得報告. 實習企業: 力旺電子 公司 實習學生:電資院學士班 李龍杰. 前言. ( 一 ) 實習時間:民國 100 年 7 月 4 日至 100 年 8 月 31 日,共 59 天 ( 二 ) 實習地點:力旺電子公司 ( 三 ) 實習導師:劉承傑 部經理 ( 四 ) 參與動機:了解科技業實際情況. 實習單位簡介. 地址 : 竹北市科學工業園區台元一街 5 號 8 樓 董事長 : 徐清祥 ( 曾任清華大學電子所所長 ) 公司簡介 : 開發高密度之嵌入式非揮發性記憶體矽智材

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2011 清大電資院學士班

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  1. 2011清大電資院學士班 「頂尖企業暑期實習」 經驗分享心得報告 • 實習企業:力旺電子公司 • 實習學生:電資院學士班李龍杰

  2. 前言 • (一)實習時間:民國100年7月4日至100年8 月31日,共59天 • (二)實習地點:力旺電子公司 • (三)實習導師:劉承傑 部經理 • (四)參與動機:了解科技業實際情況

  3. 實習單位簡介 • 地址 : 竹北市科學工業園區台元一街5號8樓 • 董事長 : 徐清祥 (曾任清華大學電子所所長 ) • 公司簡介: 開發高密度之嵌入式非揮發性記憶體矽智材 技術、IP 及產品 • 所屬部門 : 元件工程部-SONOS之元件設計、可靠度分析 及改善

  4. 實習內容 • Topic : Thicker ONO scheme evaluation for NeoFlash retenion improvement • Motivation : study the characteristics of its data retention performance

  5. CG CG e- e- e- Source Drain Source Drain “0” “1” “Logic 0” “Logic 1” VCG Flash Memory • Non-volatile Memories to store the data even with the power turned off • Cell Vt has changed with stored electron or hole in floating gate ID Ion Nitride Sensing VWL

  6. Charge Loss, Retention ID silicon measurement data simulation model ERS state PGM state charge loss charge gain Vt window

  7. Measured Retention data 80%

  8. Simulation Model 3 qψE 1 qψT 2 Ec Silicon Nitride Substrate Ev Top Oxide Tunnel Oxide Gate

  9. Simulation Model Panel

  10. ONO Thickness dependence of △Vt

  11. 實習收穫 • Acquire knowledge on device physics • Device measuring method • Gain experience and insight on data analysis • Being able to import what I have learned into practical use

  12. 附錄(實習照片)

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