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TSV: Via lining & filling. sami.franssila@aalto.fi. TSV degree of difficulty. www.yole.fr, 2010. Basic via structure. Benfield. Process flow. Benfield. Profile & filling options. Profile & step coverage. Dielectric requirements. IEEE 2009 3D system integration conference. Resistance.

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TSV: Via lining & filling


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    1. TSV: Via lining & filling sami.franssila@aalto.fi

    2. TSV degree of difficulty www.yole.fr, 2010

    3. Basic via structure Benfield

    4. Process flow Benfield

    5. Profile & filling options

    6. Profile & step coverage

    7. Dielectric requirements IEEE 2009 3D system integration conference

    8. Resistance

    9. Why is thinningneeded? • Stepcoverage of sputter? • Maximum aspectratio ~ 5 • Taperingmakes sure the seed is continuous • W_bottom=20um, t=650um wafer -> w = 134um -> pitch ~ 200um • Pitch < 100 • > waferhas to bethinneddown

    10. Silicon vias Silex

    11. Silicon vias Silex

    12. Epoxy-lining

    13. Filling with sacrificial support

    14. Packaging with TSV cap wafer

    15. Wire bonding via metal

    16. Via electrical results

    17. Nickel wire magnetic assembly Fischer, Roxhed:

    18. Ni wire process flow Fischer, Roxhed:

    19. Solder filling

    20. Copper ball filling

    21. TSV filled by CNTs

    22. CNT growth