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Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors

Chapter 4 Field-Effect Transistors. Microelectronic Circuit Design Richard C. Jaeger Travis N. Blalock. Chap4- 1. Chapter Goals. Describe operation of MOSFETs and JFETs. Define FET characteristics in operation regions of cutoff, triode and saturation.

By omer
(1035 views)

COMSATS Institute of Information Technology Virtual campus Islamabad

COMSATS Institute of Information Technology Virtual campus Islamabad

COMSATS Institute of Information Technology Virtual campus Islamabad. Dr. Nasim Zafar Electronics 1 - EEE 231 Fall Semester – 2012. DC Analysis of MOSFET and MOSFET as an Amplifier. Lecture No. 30 Contents: MOSFET Circuits at DC MOSFET as an Amplifier and as a Switch

By nita
(171 views)

ME 6405 Student Lecture

ME 6405 Student Lecture

ME 6405 Student Lecture. Transistors. Angela Sodemann Jin Yang Louis Nucci . Saturday, May 31, 2014. Lecture outline. Brief History of Transistors Introduction to Transistors Bipolar Junction Transistors (BJT) Field Effect Transistors (FET) Power Transistors. Transistor History.

By niran
(180 views)

ME 400 Energy Conversion Systems Topic 2 Presentation 5 Power Cycles

ME 400 Energy Conversion Systems Topic 2 Presentation 5 Power Cycles

ME 400 Energy Conversion Systems Topic 2 Presentation 5 Power Cycles. Emad Jassim & Ty Newell Department of Mechanical Science and Engineering University of Illinois at Urbana-Champaign. © 2011 University of Illinois Board of Trustees. All Rights Reserved.

By papina
(125 views)

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson

Introduction to Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs) Chapter 7, Anderson and Anderson. MOSFET. History Structure Future Review Threshold Voltage I-V Characteristics Modifications to I-V: Depletion layer correction (Sup. 3) Mobility, Vsat Short Channel Effects

By petunia
(266 views)

Chapter 4

Chapter 4

Chapter 4. Bipolar Junction Transistors (BJTs). Objectives. Describe the basic structure of the bipolar junction transistor (BJT) Explain and analyze basic transistor bias and operation Discuss the parameters and characteristics of a transistor and how they apply to transistor circuits.

By kert
(278 views)

Introduction to MOSFETs

Introduction to MOSFETs

Introduction to MOSFETs. Figure 4.1 Physical structure of the enhancement-type NMOS transistor: (a) perspective view; (b) cross-section. Typically L = 0.1 to 3 m m, W = 0.2 to 100 m m, and the thickness of the oxide layer ( t ox ) is in the range of 2 to 50 nm.

By badu
(111 views)

Vacuum Tube Amplifier

Vacuum Tube Amplifier

Vacuum Tube Amplifier. Team Members: Matt Andrews and Yuriy Kharin Project Adviser: DR. Michael Carter. ECE791 Fall 2010. Objective. The objective of this project is to become familiar with vacuum tubes and vacuum tube amplifiers

By dane
(147 views)

CS344: Introduction to Artificial Intelligence (associated lab: CS386)

CS344: Introduction to Artificial Intelligence (associated lab: CS386)

CS344: Introduction to Artificial Intelligence (associated lab: CS386). Pushpak Bhattacharyya CSE Dept., IIT Bombay Lecture 35: Backpropagation ; need for multiple layers and non linearity 7 th April, 2011. Backpropagation for hidden layers. …. Output layer (m o/p neurons). k. …. j.

By etoile
(63 views)

POWER ELECTRONICS

POWER ELECTRONICS

POWER ELECTRONICS. EE‐312 Engr.Talha Ahmed Khan. Introduction to Power Electronics. Power Electronics = Power + Control + Electronics Control deals with the steady state and dynamic characteristics of closed loop systems.

By blue
(539 views)

MOSFET CHARACTERIZATION LAB

MOSFET CHARACTERIZATION LAB

MOSFET CHARACTERIZATION LAB. How to Find K and Vto o. How to Find K and Vto o. ohmic contact effect. slope = . to be discussed in a future slide. V GS. Vto o. How to Find K and Vto o. Sub-threshold Conduction. ln(I D ). leakage. Vto. V GS. Sub-threshold Conduction.

By lupita
(153 views)

Lab #1 - Diodes

Lab #1 - Diodes

Lab #1 - Diodes. Real Diode Characteristic. Simple Approximation. I. I. Forward conduction region. Forward conduction region. I. V. V br. V br. V. V on. V. Reverse saturation region. V on. Diodes. Reflector. LED symbol. LEDs. R. A. I d. 1 k Ω. I d. 12 V. V d.

By aziza
(102 views)

Studies of e+A physics at an Electron-Ion Collider

Studies of e+A physics at an Electron-Ion Collider

Division of Nuclear Physics American Physical Society October 23-26, 2013 Newport News, VA. Studies of e+A physics at an Electron-Ion Collider. Liang Zheng On behalf of the BNL EIC Science Task Force Brookhaven National Lab

By lita
(108 views)

The new kid on the block The Electron Ion Collider

The new kid on the block The Electron Ion Collider

The new kid on the block The Electron Ion Collider . The Standard Model. QED: Theory of the Electromagnetic Interaction Q C D : Theory of the Strong Interaction. Feynman Diagram: e + e - annihilation. Theory of electromagnetic interactions

By gavin
(143 views)

Some Important Points!!!

Some Important Points!!!

Some Important Points!!!. “Attitude, not aptitude will take you to the altitude.” Attendance Policy. Class Discipline. Break timings. Missed Quizzes/Assignments. Figure 3.7 The i– v characteristic of a silicon junction diode.

By frye
(157 views)

Cross Sectional View of FET

Cross Sectional View of FET

Cross Sectional View of FET. FET I-V Characteristic. Saturation Voltage. V pinchoff = V DS,sat = V GS – V TH Separates resistive from saturation region The drain current is given by Solving for V DS,sat :. Early Voltage Function of Length. Early Voltage in MOSFETs.

By betty
(125 views)

Fundamentals of Microelectronics

Fundamentals of Microelectronics

Fundamentals of Microelectronics. CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box.

By gene
(338 views)

Masao Watanabe, Accelerator Group, JAERI

Masao Watanabe, Accelerator Group, JAERI

Design of DC septum magnets based on measurements and 3D calculation of an R&D septum magnet for Rapid Cycle Synchrotron of J-PARC. Masao Watanabe, Accelerator Group, JAERI. Outline. J-PARC overview RCS and the septum magnets overview Comparison of measurements and

By halona
(95 views)

EE 330 Lecture 28

EE 330 Lecture 28

EE 330 Lecture 28. Small-Signal Model Extension Applications of the Small-signal Model. Review from Last Lecture. Consider 4-terminal network. Nonlinear network characterized by 3 functions each functions of 3 variables. Review from Last Lecture.

By harmon
(130 views)

Procedure

Procedure

Tables of Thermodynamic Properties by Dr. M. A. Habib Professor, Mechanical Engineering Department, KFUPM. Procedure. The procedure of calculating the thermodynamic property is as follows: Define the state by two independent properties. Choose SI units tables.

By field
(123 views)

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