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EE466: VLSI Design

EE466: VLSI Design. Lecture 02 Non Ideal Effects in MOSFETs. Outline. Junction Capacitances Parasitic capacitances Velocity Saturation Channel length modulation Threshold Voltage Body effect Subthreshold conduction.

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Channel Length Modulation

The inversion layer charge Q I represents the total mobile electron charge on the surface and its expression at the source end of the channel is: Q I at x=0 =-C ox (V GS -V T0 ) and the inversion layer charge at the drain end of the channel is expressed as: Q I at x=L =-C ox (V GS -V T0 -V DS )

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Overlap capacitances - PowerPoint PPT Presentation

EE466: VLSI Design

Channel Length Modulation