'Gate length' presentation slideshows

Technology Roadmap for Nano-electronics

Technology Roadmap for Nano-electronics. Rational You ITRI-IEK-NEMS 2001/08/01. Source: IST (2000/11). Contribution of Electronics to the Gross Product. Source: IST (2000/11). Electronic Market Forecast. Source: IST (2000/11). Minimum Feature Size versus Year of Introduction.

691 views • 58 slides

NEMS Devices OPPORTUNITIES AND CHALLENGES

645 views • 36 slides

Injection Molding Molds

Injection Molding Molds. Professor Joe Greene CSU, CHICO. Introduction. Background Concept is simple Melt plastic, flow into mold and take part shape, cool, demold Injection molding makes parts in discrete (discontinuous) process

676 views • 29 slides

Lecture #27 MOS

Lecture #27 MOS. LAST TIME: NMOS Electrical Model Describing the I-V Characteristics Evaluating the effective resistance R Switching behavior TODAY: NMOS physical structure: W and L and d ox , PMOS Transistor Geometry and capacitance Scaling of properties with size: ID and C.

517 views • 29 slides

Lecture #27 MOS

Lecture #27 MOS. LAST TIME: NMOS Electrical Model Describing the I-V Characteristics Evaluating the effective resistance R Switching behavior TODAY: NMOS physical structure: W and L and d ox , PMOS Transistor Geometry and capacitance Scaling of properties with size: ID and C.

299 views • 29 slides

FLCC Seminar

FLCC Seminar. Spacer Lithography for Reduced Variability in MOSFET Performance Prof. Tsu-Jae King Liu Electrical Engineering & Computer Sciences Dept. University of California at Berkeley Graduate Student : Ms. Xin Sun. Outline. Introduction MOSFET scaling Lithography challenges

555 views • 27 slides

First Time User Guide to OMEN Nanowire**

First Time User Guide to OMEN Nanowire**. Sung Geun Kim*, Saumitra R. Mehrotra, Ben Haley, Mathieu Luisier, Gerhard Klimeck Network for Computational Nanotechnology (NCN) Electrical and Computer Engineering *kim568@purdue.edu ** https://nanohub.org/resources/5359. Introduction : Device

405 views • 21 slides

Front End Processes 2007 ITRS

Front End Processes 2007 ITRS. ITRS Public Conference July 18, 2007 San Francisco. FEP ITWG Membership: US: J. Butterbaugh (presenter), R. Jammy, L. Larson Japan: I. Mizushima, M. Niwa, H. Kitajima, S. Kawamura, M. Watanabe Europe: M. Alessandri, W. Mueller, C. Stapelmann

389 views • 19 slides

Design and Implementation of VLSI Systems (EN0160) Lecture 16: Scaling Theory

327 views • 16 slides

UTB SOI for LER/RDF

666 views • 16 slides

Simulation of a High Performance 35 nm Gate Length CMOS

Simulation of a High Performance 35 nm Gate Length CMOS. John Rozen EECE 307. Outline. Structure and Doping Profiles Scaling Effects Single Transitors Characteristics Considerations for the CMOS Conclusions. Outline. Structure and Doping Profiles Scaling Effects

358 views • 16 slides

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???? / ????. A Novel Manufacturing Process of AlGaN/GaN HEMT for X-Band High-Power Application on Si (111) Substrate Cong Wang, Ram Krishna Maharjan, Sung-Jin Cho, and Nam-Young Kim Proceedings of APMC 2012 ??? : ?????? MA130224 ???. Southern Taiwan University.

302 views • 9 slides

ITRS 2008 ITWG Spring Meeting April 2-4 Petersburg, Germany FEP TWG Report

ITRS 2008 ITWG Spring Meeting April 2-4 Petersburg, Germany FEP TWG Report. FEP ITWG Spring 2008 Participants. Reported New TWG member FeRAM Masayoshi Horii. ITRS 2008 ITWG Spring Meeting FEP ITWG. FEP Plans for 2008 Change Effective Gate Length

238 views • 5 slides

Defocus-Aware Leakage Estimation and Control ( vlsicad.ucsd )

Layout Analysis. Placed Design. CMP Simulation. Device Pitches. Defocus over Die. Bossung Lookup Table. Predicted Linewidths. Leakage Estimation. Defocus-Aware Leakage Estimation and Control ( http://vlsicad.ucsd.edu ). Puneet Sharma (sharma@ucsd.edu ) Advisor: Prof. Andrew B. Kahng

85 views • 1 slides