'Gate capacitance' presentation slideshows

Performance of CMOS Circuits

1k views • 66 slides

Introduction to CMOS VLSI Design Scaling and Economics

1k views • 61 slides

Circuit characterization and Performance Estimation

Circuit characterization and Performance Estimation. Introduction. Need simple models to estimate system performance in terms of signal delay and power dissipation .

558 views • 54 slides

Date : 11/10/14

Subject Name: Fundamentals Of CMOS VLSI Subject Code: 10EC56 Prepared By: Aswini N, Praphul M N Department: ECE Date: 10/11/2014. Engineered for Tomorrow. Prepared by : MN PRAPHUL & ASWINI N Assistant professor ECE Department. Date : 11/10/14.

453 views • 45 slides

Introduction to CMOS VLSI Design Lecture 6: Wires

Introduction to CMOS VLSI Design Lecture 6: Wires. David Harris Harvey Mudd College Spring 2004. Outline. Introduction Wire Resistance Wire Capacitance Wire RC Delay Crosstalk Wire Engineering Repeaters. Introduction. Chips are mostly made of wires called interconnect

892 views • 36 slides

Introduction to CMOS VLSI Design Lecture 6: Wires

Introduction to CMOS VLSI Design Lecture 6: Wires. David Harris Harvey Mudd College Spring 2004. Outline. Introduction Wire Resistance Wire Capacitance Wire RC Delay Crosstalk Wire Engineering Repeaters. Introduction. Chips are mostly made of wires called interconnect

823 views • 36 slides

ELEC 5270/6270 Fall 2007 Low-Power Design of Electronic Circuits Dynamic Power: Device Sizing

ELEC 5270/6270 Fall 2007 Low-Power Design of Electronic Circuits Dynamic Power: Device Sizing. Vishwani D. Agrawal James J. Danaher Professor Dept. of Electrical and Computer Engineering Auburn University, Auburn, AL 36849 vagrawal@eng.auburn.edu

329 views • 17 slides

CSCE 612: VLSI System Design

CSCE 612: VLSI System Design. Instructor: Jason D. Bakos. MOSFET Theory. p-type body: majority carriers are holes. accumulation mode. V t depends on doping and t ox. Regions of Operation. Gate to channel: V gs near source V gd near drain. Switching delay is determined by:

272 views • 11 slides

A Modern CMOS Process

A Modern CMOS Process. Observe parasitic capacitances! Cap from gate to channel. Cap from gate sidewall to source or drain. Cap from bottom of drain diffusion to well. Cap from sidewall of drain to well (small with STI). Dual-Well Trench-Isolated CMOS Process. Epi on p+ substrate shown.

630 views • 6 slides

High Speed Low Noise CCD Outputs for Backside Thinned Imagers

High Speed Low Noise CCD Outputs for Backside Thinned Imagers. Objectives Design of High Speed , +40MHz, Low Noise, <4e-, Output Amplifiers for Backside Thinned CCD Imagers Simulate device parameters using T-Spice Validate simulation through parametric analysis of test amplifiers using

127 views • 1 slides