'Diffusion capacitance' presentation slideshows

Performance of CMOS Circuits

1k views • 66 slides

Advance Electronics

Advance Electronics. Prof . Rajput Sandeep Assist. Prof., EC Dept. HCET , Siddhpur. Chapter 1: Transistor at High Frequency Lecture : 1. The hybrid- pi CE Transistor Model. The hybrid ? model at low frequencies. Chapter 1: Transistor at High Frequency Lecture : 2.

1.56k views • 63 slides

Lecture 3: CMOS Transistor Theory

Lecture 3: CMOS Transistor Theory. Outline. Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V Characteristics Gate and Diffusion Capacitance. Goal of this section. Present intuitive understanding of device operation Introduction of basic device equations

893 views • 63 slides

VLSI System Design

VLSI System Design. Lect. 2.1 CMOS Transistor Theory. Engr. Anees ul Husnain ( anees.buzdar@gmail.com ) Department of Electronics & Computer Systems Engineering, College of Engineering & Technology, IUB. Outline. Introduction MOS Capacitor nMOS I-V Characteristics

405 views • 22 slides

Lecture 3: CMOS Transistor Theory

Lecture 3: CMOS Transistor Theory. Outline. Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V Characteristics Gate and Diffusion Capacitance. Introduction. So far, we have treated transistors as ideal switches An ON transistor passes a finite amount of current

340 views • 19 slides

Lecture 3: CMOS Transistor Theory

Lecture 3: CMOS Transistor Theory. Outline. Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V Characteristics Gate and Diffusion Capacitance. Introduction. So far, we have treated transistors as ideal switches An ON transistor passes a finite amount of current

390 views • 19 slides

Lecture 3: CMOS Transistor Theory

Lecture 3: CMOS Transistor Theory. Outline. Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V Characteristics Gate and Diffusion Capacitance. Introduction. So far, we have treated transistors as ideal switches An ON transistor passes a finite amount of current

478 views • 19 slides

CSCE 612: VLSI System Design

CSCE 612: VLSI System Design. Instructor: Jason D. Bakos. MOSFET Theory. p-type body: majority carriers are holes. accumulation mode. V t depends on doping and t ox. Regions of Operation. Gate to channel: V gs near source V gd near drain. Switching delay is determined by:

273 views • 11 slides

Chapter 7. Small-signal admittance

Chapter 7. Small-signal admittance. We will study the small signal response of the pn junction diode. A small ac signal ( v a ) is superimposed on the DC bias. This results in ac current ( i ). Then, admittance Y is given by: Y = i / v a = G + j ? C

298 views • 8 slides

Chapter 7. Small-signal admittance

Chapter 7. Small-signal admittance. We will study the small signal response of the pn junction diode. A small ac signal ( v a ) is superimposed on the dc bias. This results in ac current ( i ). Then, admittance Y is given by: Y = i / v a = G + j ? C

270 views • 8 slides

Linear Delay Model

In general the propagation delay of a gate can be written as: d = f + p p is the delay due to intrinsic capacitance. f is the effort delay or stage effort and depends on the complexity and fanout of the gate.

796 views • 4 slides