MuGFET

1. MuGFET First Time User Guide to MuGFET Mar. 28, 2008

2. Overview • Introduction • Rappture input interface • Rappture output interface • Summary

3. Introduction-Structure • What is MuGFET? • 1. The simulation tool for nano-scale FinFET structure • Double gate (AMD, IBM, Motorola) • Tri-gate or 3-D (Intel)

4. Introduction-Structure • 2. Simulator for nanowire structure

5. Introduction-Simulator • MuGFET uses existing simulation tool PROPHET and PADRE Available in nanohub.org Fast but rough – general partial differential eq. solver Comparison • PROPHET Slow but in detail – device oriented solver • PADRE Poisson equation Self consistent Drift-diffusion equation

6. Introduction-Purpose Purpose of MuGFET • Very convenient graphical user interface using Rappture Users don’t have to worry anything happened inside the simulator • Great flexibility with respect to structure and simulator • Drift-diffusion solver for relatively large nano-device • without full quantum mechanical calculation Fast and efficient

7. Overview • Introduction • Rappture input interface • Rappture output interface • Summary

8. Overall Procedure Device Type Device Structure Bias and Temperature Option Simulate

9. Example Loader Click! Choose

10. Example Loader Not changing any input of the example loaded, results come out from database without simulation

11. Example Loader If any input is changed from examples, full simulation will start

12. Device Type • Class : FinFET or Nanowire • Dimension 2D-Double Gate 3D-Triple Gate • Gate type : metal gate, poly gate

13. Device Structure Geometry in x, y, z

14. Device Structure • Geometry-X : Lateral Direction • Channel width • The width of silicon channel region • Oxide thickness • Left wall • Right wall • Poly gate thickness • Turned on if poly-gate type chosen in previous step  The default device size is relatively large because this is a drift-diffusion type simulator.  Specially, the cross section should be large compared to electron wave length so that quantum effect should not appear to use drift-diffusion equation.

15. Device Structure • Geometry-Y : Propagation Direction • Gate length • Not the channel length but the length of the gate electrode • Source length, drain length • Source extension length • The length how much the source is extended to the gate • Positive if the source is overlapped with the gate which means the gate goes over the source region • Negative if the source is underlapped with the gate which means the gate doesn’t go over the source region • The default : 0 • Drain extension length • Same as the source extension length

16. Device Structure • Geometry-Z • Vertical direction for 3D simulation • Channel height • The height of silicon channel region • Top_ox : oxide thickness on top of the channel • Substrate oxide thickness • SOI (Silicon on Insulator)

17. Geometry-X (Nanowire) radial direction The x-direction in nanowire is radial direction of the nanowire

18. Geometry-Y (Nanowire) The y-directional structure in nanowire configuration is same as that in finFET

19. Material-General Property

20. Material-Bandstructure Property

21. Material-Electron Property

22. Material-Hole Property

23. Doping

24. Gaussian Doping • Gaussian Doping • Gaussian doping flag • Check “yes” if you want to build Gaussian doping profile • Characteristic length for source • The length from source and channel boundary to where the value of Gaussian doping is at its half • Characteristic length for drain • The length from drain and channel boundary to where the value of Gaussian doping is at its half • Penetration into oxide • The length how much the Gaussian doping penetrates into oxide region

25. Bias and Temperature Gate : Id-Vg plot for each Vd Drain: Id-Vd plot for each Vg

26. Options Options for PADRE Options for PROPHET

27. Overview • Introduction • Rappture input interface • Rappture output interface • Summary

28. Grid Preview

29. p-FinFET 45nmX30nm Double Gate - IV Curve PROPHET and PADRE result comparison Logarithmic Plot : Log10abs(Id)

30. Comparison with Experiment *Experiment results from X. Huang et al., IEDM ,1999

31. Comparison with *Nanowire Vg Vth Larger on-current in Nanowire Id All same Subthreshold slope * Nanowire is quantum ballistic transport simulation tool for nanowire - available in http://www.nanohub.org/tools/nanowire

32. Comparison with *Nanomos Vg oxide thickness : 2.5 nm Id * Nanomos 2D double gate simulation tool - available in http://www.nanohub.org/tools/nanomos

33. Sub-threshold Swing Slope

34. Sub-threshold Swing *Experiment results from X. Huang et al., IEDM ,1999

35. Multiple IV curve for Id-Vg • Id-Vg plot in PROPHET simulation • Id-Vg plot in PADRE simulation

36. Multiple IV curve for Id-Vd • Id-Vd plot in PROPHET simulation • Id-Vd plot in PADRE simulation

37. Doping, Electron, Hole Density At equilibrium Sequence plot for applied bias

38. Electrostatic Potential Profile Electrostatic potentail at equilibrium Sequential plot at applied bias

39. Plots only in PADRE Net charge density Electric field

40. Plots only in PADRE Ec Quasi-Fermi Levels Ev Energy band diagram

41. 2D Plots • 2D Electrostatic potential in PROPHET • 2D Electrostatic potential in PADRE

42. 3D Plots 2D Surface plot Slow DX format visualization (fast) - Future work

43. Overview • Introduction • Rappture input interface • Rappture output interface • Summary

44. Summary • Brief description of MuGFET • GUI (Graphical User Interface) for convenient simulation • Flexible and convenient user interface to afford various type of structure and simulator • Validation of the drift diffusion solver PROPHET and PADRE in relatively large nano-device

45. Considered Future Work • New Geometry triangular shape, back gate, ellipsoidal shape – Mesh builder • Full band structure calculation • 3D visualization (openDX) • Dessis