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Lecture #38

Lecture #38

OUTLINE The MOSFET: Bulk-charge theory Body effect parameter Channel length modulation parameter PMOSFET I-V Small-signal model Reading : Finish Chapter 17, 18.3.4. Lecture #38. Problem with the “Square Law Theory”. Ignores variation in depletion width with distance y.

By lluvia
(154 views)

Disseny Electrònic Assistit per Ordinador

Disseny Electrònic Assistit per Ordinador

Disseny Electrònic Assistit per Ordinador. 2_FPGA_1 - 1. Dispositius lògics programables i VHDL. ispLSI1032E-. Estructura. HIGH-DENSITY PROGRAMMABLE LOGIC — High Speed Global Interconnect — 6000 PLD Gates — 64 I/O Pins, Eight Dedicated Inputs — 192 Registers

By colby
(164 views)

Design and Application of Power Optimized High-Speed CMOS Frequency Dividers

Design and Application of Power Optimized High-Speed CMOS Frequency Dividers

Design and Application of Power Optimized High-Speed CMOS Frequency Dividers. 3. 3. Outline. Background. 1. Approach. 2. Application. 3. Conclusion. 4. A Application. C Solution. PLL DDS RF circuit …. Circuit Partition Architecture Select FF.

By lok
(138 views)

Design of Front-End Low-Noise and Radiation Tolerant Readout Systems

Design of Front-End Low-Noise and Radiation Tolerant Readout Systems

Design of Front-End Low-Noise and Radiation Tolerant Readout Systems. José Pedro Cardoso. Overview. Introduction Training Project Milestones Conclusions. Introduction.

By hakan
(134 views)

Reconfigurable Computing

Reconfigurable Computing

Reconfigurable Computing. David Ojika. What to Expect. Part I : Background Motivating research [10 mins ] Part II: Introduction Current research [10 mins ] Part III: Guest Paper Reconfigurable Computing [20 mins ]

By faxon
(212 views)

Future Low Power Superconductor Logic

Future Low Power Superconductor Logic

Future Low Power Superconductor Logic. Adam Sarhage. Introduction. Current CMOS technology is reaching its theoretical limits for operating speed, and the next generation of supercomputers could require hundreds of megawatts of power to operate if based on CMOS technology.

By arnaud
(206 views)

Lecture 7

Lecture 7

Lecture 7. The Eye and Neuromorphic Vision. Outline. The eye and the retina Artificial Vs biological vision systems Fundamentals of photo receptors Read-out strategies Examples of neuromorphic vision systems Further processing. Eyeball Cross Section and Retina. Retina Cells.

By maxine
(210 views)

Quiz Session -1

Quiz Session -1

Quiz Session -1 . Question and Answer CMOS VLSI. How many electrons are present in valence orbit of a silicon. 2. 3. 1. 4. Number of transistors in SSI. 10000-100000. 1000-10000. 100-1000. 10-100. How many valence electrons present in phosphorous. 3. 4. 6. 5.

By sheena
(127 views)

Scan-Through-TAP: Combining Scan Chain and Boundary Scan Features in SOC

Scan-Through-TAP: Combining Scan Chain and Boundary Scan Features in SOC

Scan-Through-TAP: Combining Scan Chain and Boundary Scan Features in SOC. Introduction. What is Scan-through-TAP? Use of IEEE Standard 1149.1 user instruction to concatenate the internal scan chain with the BSR chain to perform a single chain operation

By loring
(565 views)

Design of a ‘Single Event Effect’ Mitigation Technique for Reconfigurable Architectures

Design of a ‘Single Event Effect’ Mitigation Technique for Reconfigurable Architectures

Design of a ‘Single Event Effect’ Mitigation Technique for Reconfigurable Architectures. SAJID BALOCH. Prof. Dr. T. Arslan 1,2 Dr.Adrian Stoica 3. Supervisory Team. ACRONYMES. SEU (Single Event Effect) SET (Single Event Transient) SEB (Single Event Burnout)

By bunme
(152 views)

SLOVENIA

SLOVENIA

SLOVENIA. Circuit Biasing Current Sources Current Mirrors Current references Voltage References Circuit Examples. Voltage-to-Current Converters. Temperature Characteristic of Integrated Resistors and Bipolar Device. BiCMOS Voltage Reference I. Low Voltage Reference I.

By annis
(205 views)

10 Gbps Transimpedance Amplifier and Laser Driver in 0.18 um CMOS

10 Gbps Transimpedance Amplifier and Laser Driver in 0.18 um CMOS

10 Gbps Transimpedance Amplifier and Laser Driver in 0.18 um CMOS. Martin A. Brooke Duke University Department of Electrical and Computer Engineering email: mbrooke@ee.duke.edu. 10 Gbps Optical Receiver in 0.18 m m CMOS. 0.18 m m TSMC CMOS process Integrated thin film OE devices.

By dusan
(197 views)

指導教授 : 林志明 級別 : 碩一 學生 : 呂致遠 Mail:s94662010@mail.ncue.tw

指導教授 : 林志明 級別 : 碩一 學生 : 呂致遠 Mail:s94662010@mail.ncue.tw

彰師大積體電路設計所 A 9–50-GHz Gilbert-Cell Down-Conversion Mixer in 0.13- μ m CMOS Technology Chin-Shen Lin , Student Member, IEEE , Pei-Si Wu , Student Member, IEEE , Hong-Yeh Chang , Member, IEEE ,and Huei Wang , Fellow, IEEE IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, VOL. 16, NO. 5, MAY 2006.

By junius
(150 views)

Theoretical Analysis of Low Phase Noise Design of CMOS VCO

Theoretical Analysis of Low Phase Noise Design of CMOS VCO

Theoretical Analysis of Low Phase Noise Design of CMOS VCO.

By shira
(110 views)

Lecture 23

Lecture 23

Lecture 23. OUTLINE The MOSFET (cont’d) Drain-induced effects Source/drain structure CMOS technology Reading : Pierret 19.1,19.2; Hu 6.10, 7.3 Optional Reading: Pierret 4; Hu 3. Drain Induced Barrier Lowering (DIBL).

By layne
(316 views)

Monolithic sensors in high-voltage deep-submicron technology

Monolithic sensors in high-voltage deep-submicron technology

Monolithic sensors in high-voltage deep-submicron technology. Ivan Peric University of Heidelberg, Germany. Introduction to pixel sensors in high voltage CMOS technology Operation principle, advantages and disadvantages Summary of the project results Pixel types

By zea
(187 views)

B. Vaz, N. Paulino * , J. Goes *, M. Rodrigues, P. Faria, R. Monteiro, N. Penetra, T. Domingues

B. Vaz, N. Paulino * , J. Goes *, M. Rodrigues, P. Faria, R. Monteiro, N. Penetra, T. Domingues

Design and Testing of a Radiation Hardened 13-bit 80 MS/s Pipeline ADC Implemented in a 90nm Standard CMOS Process. B. Vaz, N. Paulino * , J. Goes *, M. Rodrigues, P. Faria, R. Monteiro, N. Penetra, T. Domingues Silicon and Software Systems Limited * Also with Universidade Nova de Lisboa.

By aradia
(133 views)

“Mixed Signal VLSI DESIGN: Basics of CMOS Analog, Digital and RF Circuits”

“Mixed Signal VLSI DESIGN: Basics of CMOS Analog, Digital and RF Circuits”

“Mixed Signal VLSI DESIGN: Basics of CMOS Analog, Digital and RF Circuits”. Arun N. Chandorkar Department of Electrical Engineering Indian Institute of Technology, Bombay Powai, Mumbai-400076,India E-Mail: anc@ee.iitb.ac.in 16th March 2009. Mixed Signal Basics. OUTLINE: 1.Technology

By sylvia-brewer
(440 views)

BiCMOS Technology

BiCMOS Technology

BiCMOS Technology. MOHD YASIR M.Tech. I Semester Electronics Engg. Deptt. ZHCET, AMU. Brief Outline. Introduction Advantages of BiCMOS Technology Evolution of BiCMOS from CMOS BiCMOS Process Flow Applications of BiCMOS Technology Conclusion References. Introduction.

By charisse-lennox
(488 views)

Report on PXD Session

Report on PXD Session

Report on PXD Session. Overview on pixel layer requirements (G. Varner, Hawaii). Overview on pixel layer requirements (G. Varner, Hawaii). Overview on pixel layer requirements (G. Varner, Hawaii). Overview on pixel layer requirements (G. Varner, Hawaii).

By tablita-lee
(53 views)

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