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EDGE EFFECTS IN REACTIVE ION ETCHING: THE WAFER- FOCUS RING GAP*

EDGE EFFECTS IN REACTIVE ION ETCHING: THE WAFER- FOCUS RING GAP* Natalia Yu. Babaeva and Mark J. Kushner Iowa State University Department of Electrical and Computer Engineering Ames, IA 50011, USA natalie5@iastate.edu mjk@iastate.edu http://uigelz.ece.iastate.edu

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Avs2006 natalie 10 - PowerPoint PPT Presentation

EDGE EFFECTS IN REACTIVE ION ETCHING: THE WAFER- FOCUS RING GAP*