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Growth Behavior of Ge Quantum Dots on the Nano-sized Si(111) surface bounded by the (100) facets

(111). (113). (114). Growth Behavior of Ge Quantum Dots on the Nano-sized Si(111) surface bounded by the (100) facets. S.-S. Ferng and D.-S. Lin Institute of Physics, National Chiao-Tung University, Hsinchu 300, Taiwan.

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111 150 nm - PowerPoint PPT Presentation

Growth Behavior of Ge Quantum Dots on the Nano-sized Si(111) surface bounded by the (100) facets