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Magnetic Semiconductor corps.

2003/ 11/ 22. H. Yuasa. K. Minami. T. Nagatsuka. J. Jogo (in USA). Dr. V. Smirnov. Magnetic Semiconductor corps. Purpose. Sato Lab. Cd 1-x Mn x GeP 2. CdGeP 2. (0≦x ≦1). GaAs substrate. GaAs substrate. GaAs substrate. (x=0). MnGeP 2. (x=1). Cd 班. Mn 班.

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Magnetic Semiconductor corps.

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  1. 2003/ 11/ 22 H. Yuasa K. Minami T. Nagatsuka J. Jogo (in USA) Dr. V. Smirnov Magnetic Semiconductor corps.

  2. Purpose Sato Lab. Cd1-xMnxGeP2 CdGeP2 (0≦x ≦1) GaAs substrate GaAs substrate GaAs substrate (x=0) MnGeP2 (x=1) Cd班 Mn 班 ・GaAs基板上にCd1-xMnxGeP2薄膜の作製 （室温で強磁性を示すものとしては世界初の薄膜！！）

  3. MBE Sato Lab. Base pressure 3.0×10-10 Torr Growth temperature Mn:450～550℃ Cd:200℃前後 Pump C.C gauge Substrate Flux monitor REED Screen TBP (Gas) Cd Mn Ge (Solid)

  4. EDX (Mn)

  5. EDX (Cd)

  6. XRD (Mn) ??? MnP? MnGe?

  7. XRD (Cd) ???

  8. Plan ・　組成比 ・　XRDのデータ解析 　　　（リートベルト解析） ・　基板の影響（InP…) ・　ラマン分光測定,TEM

  9. おわり

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