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This application utilizes high-resolution images for CD measurements in FET features, achieving <0.01 micron repeatability with a 4-second processing time. The technology, based on wavelength detection, enables resolutions below 10 nm for optical CD measurement.
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Application Note:CD Measurementfor FET Features NGS 3500 Advanced Metrology System
Image Data Set Notes: • 20 High Resolution Images of the same site were used in the repeatability test • Wafer was slightly moved between measurement to create realistic positional and focus variation • No vibration isolation or special fixture was used in the test
Data Summary – CD Measurement • < 0.01 micron Repeatability • 4 seconds Processing Time (80 measurements) Notes: • Gate Width was calibrated as 0.5 um. • Other measurements were not calibrated. • Optics: 100x Objective (FOV ~ 90um x 75 um) • Camera: High-Res. Color camera with 0.036 um/ pixel
ChromaticEdge Contrast Technology * * Patent Pending • This technology based on wavelength detection enables much better resolution for optical CD measurement. Resolutions below 10 nm are possible with standard optical microscopy. • The edges are very sharp based on wavelength contrast. Due to optical resolution limit, the same edge is blurred with noise and low contrast when light intensity (B&W) information is used.