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Advanced Techniques in Test and Measurement Industry Workshop - Agilent Technologies Mar. 2013

Learn how Agilent Technologies utilizes ROOT for data visualization, high-volume data logging, and curve fitting in electronic device material analysis. Discover the significance of dielectric materials in the electronics industry and delve into semiconductor device simulation to explore material physics. Gain insights into electrostatic and conductivity simulations, as well as transient simulations using innovative techniques like FDTDM. Explore ROOT features for dynamic visualization, data logging, and curve fitting parameter optimization. Receive tips on improving curve fitting accuracy and providing feedback for enhancing ROOT functionalities.

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Advanced Techniques in Test and Measurement Industry Workshop - Agilent Technologies Mar. 2013

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  1. ROOT used inTest and Measurement Industry ROOT Workshop Mar 2013 Agilent Technologies Masaharu Goto

  2. How we use ROOT • Data Visualization • High Volume Data Logging • Curve Fitting

  3. Electronic Device Material • Dielectric Material is very important in Electronics Industry • Many kinds of dielectric materials are used in electronic devices • ex. High-k for gate dielectric, Low-k for interconnect insulation • Physics of dielectrics are not fully understood D G Low-k Interconnect insulation S High-k Gate Dielectric B S G D substrate = B MOS FET MOS FET Semiconductor Devices PC, Cellphone Silicon wafer ICs

  4. Semiconductor Device Simulation Using semiconductor device simulation technique, we researched material physics Basic Formula :potential, :charge distribution, :permittivity, D:diffusion constant, g:conductivity, Gc: carrier generation, : equilibrium charge density, : carrier life time Electrostatic Simulation Capacitance ( ) Solving electrostatic Poisson’s Equation will give capacitance information Conductivity Simulation Conductance ( ) Solving current continuity equation will give conductance information Transient Simulation Solving both equation alternately will yield transient simulation Transient ( )

  5. SimulationEnvironment 2D layout Physical Parameter Layer definition Simulation Script 3D geometry Input files Finite Differential Time Domain Method (FDTDM) Simulation SimC Simulation Result Output File Visualization ROOT Transient waveform Potential Current density Carrierdistribution

  6. Animation Simulation Result Script, Parameter, Geometry Output File Replay Information Input files Finite Differential Time Domain Method (FDTDM) Simulator SimC Dynamic Linking ROOT Animation Carrierdistribution

  7. Data logging • Data logging of Huge Measurement Data ROOT Analysis Test System Software ROOT I/O ROOT file ROOT I/O Signal Source Measurement Unit row access Data Converter column access Database Device Under Test

  8. Curve Fitting Fitting parameters • Transient Approximation Formula diverge n=2 n=1 , converge n < 2 converge n >= 2 diverge (cannot happen) diverge • Curve fitting result of n using experimental data Geometry A 1.9 < n < 2.6 n depends on geometry n>2 in most of the cases It turns out above formula is not a good approximation We tried to think of a new theory which satisfies n = Geometry B 2.2 < n < 7.5 diverge n = finite value

  9. Feedback • ROOT is very nice and powerful. We have few feedbacks • Visualization • Log scale (2D graph) • Log scale option sometimes does not work • Should accept negative value (just ignore) • High volume measurement data logging • Independent ROOT I/O library • Legacy platform support (There are still HP-UX, AIX servers) • Curve fitting • Sometimes, curve does not fit very well. Tips to improve?

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