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High Linear Voltage References for on-chip CMOS Temperature Sensor

High Linear Voltage References for on-chip CMOS Temperature Sensor. 13th IEEE International Conference on Electronics, Circuits and Systems, 2006. 指導老師 : 易序忠 老師 班級 ：積體碩一 學號 ： 96662010 姓名 ：陳鴻鑫. Outline.

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High Linear Voltage References for on-chip CMOS Temperature Sensor

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  1. High Linear Voltage References for on-chip CMOS Temperature Sensor 13th IEEE International Conference on Electronics, Circuits and Systems, 2006. 指導老師 : 易序忠 老師 班級 ：積體碩一 學號 ：96662010 姓名 ：陳鴻鑫

  2. Outline • INTRODUCTION • CIRCUIT DESIGN • EXPERIMENTAL RESULT • CONCLUSION

  3. INTRODUCTION • Previous research has indicated that the thermal problem can cause significant performance decay as well as reducing of circuitry reliability. In order to avoid thermal damages, early detection of overheating and properly handling such event are necessary. • Previous research has proposed the use of MOS transistors operating in the weak inversion region to replace the bipolar devices in conventional PTAT circuits. However, such solutions often have linearity problem in high temperature region. • In this paper, both PTAT and IOAT voltage references are redesigned by utilizing sub-threshold MOSFETs and temperature complementation technique to enhance the linearity and produce a more stable output.

  4. CIRCUIT DESIGN • The gate-source voltage of an MOS diode-connected transistor biased with a 100nA current and the diode aspect ratio was set to 50/2 are simulated. • The gate-source voltage of an nMOS which operated in weak inversion has a negative temperature coefficient (nTC) and can been modeled as:

  5. If we put PTAT core and VGSn (weak inversion) together, the IOAT voltage reference will be achieved by summing up both out. • M1, M2, and compensation transistor Mc operate in weak inversion region while transistors M3-M8 ensure the current ratio of M1-M2 pair.

  6. The first part circuit, PTAT voltage reference. • A negative temperature coefficient will be produced in the gate-source voltage of Mn. • We use a current mirror to make them sum up in current type.

  7. EXPERIMENTAL RESULT • The simulation range is from -55°C to 170°C for each circuit.

  8. The performance of PTAT will be unaffected. But IOAT will change with manufacture variation (in FF and SS corner). Both the gain of the noise in the power supply for PTAT and IOAT are very scintilla.

  9. CONCLUSION • In this paper, -55°C to 170°C high linear voltage references circuitry for fully integrated temperature sensor is designed and implemented in TSMC 0.13μm and 0.18μm CMOS technology. • Base on the simulation results, the R-squares of both circuitries are better than 0.999 in a considerable wider temperature range from -55°C to 170°C.

  10. Thank you for your attention !

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