Silicon Nano Device Laboratory / Dept of ECE. High Performance ALD HfO 2 -Al 2 O 3 Laminate MIM Capacitors for RF and Mixed Signal IC Applications.
High Performance ALD HfO2-Al2O3 Laminate MIM
Capacitors for RF and Mixed Signal IC Applications
Hang Hu1, Shi-Jin Ding1, HF Lim1, Chunxiang Zhu1, M.F. Li1, 2, S.J.Kim1, XF Yu1, JH Chen1, YF Yong1, Byung Jin Cho1, D.S.H. Chan1, Subhash C Rustagi2, MB Yu2, CH Tung2, Anyan Du2, Doan My2, PD Foo2, Albert Chin3, Dim-Lee Kwong4
1SNDL, Dept. of ECE, National Univ. of Singapore, Singapore,
2Institute of Microelectronics, Singapore,
3Dept. of Electronics Eng., National Chiao Tung Univ., Taiwan
4Dept. of Electrical & Computer Eng., Univ. of Texas, Austin, TX 78712, USA
The International Technology Roadmap for Semiconductors, 2002 Edition
TEM photo of 13 nm laminate film
Final Device structure for characterization
Capacitor modeling in RF regime
modeling in RF regime
MIM capacitors by IC-CAP using SPICE3 simulator.
capacitors from 50 MHz to 20 GHz
of laminate capacitors (k ~19).
nm MIM capacitor (normalized to JRT: leakage
measured at room temperature)
capacitor, showing Pool-Frankel conduction at
capacitors with thicknesses of 13, 31 and 43 nm
laminate MIM capacitors. The implication is
significant for the scaling of the high-k dielectrics.
laminate MIM capacitors
The inset shows time dependence of linear VCC .
stress condition. The recovery of leakage and VCCs
may further prolong lifetime under AC condition.
with three different thicknesses
device up to 2000s. The device was re-stressed and
re-measured after interrupting stress for 10 hours.
50% failure time criteria, the extrapolated voltage for
10 years lifetime is 3.3 V.
. XF Yu et al. EDL. Vol. 24, 2003.
. Tsuyoshi. I et al. IEDM 2002, p.940.
. C. H. Huang, et al. MTT-S. 2003.
. Y. L. Tu. et al VLSI symp. 2003, p.79.
. S.J. Kim et al. VLSI symp. 2003, p.77.
have been demonstrated for the first time.
density, superior dielectric stability up to 20 GHz,
low leakage current, and promising reliability.
~ 211 ppm/V,Leakage ~ 7.45 nA/cm2at 2 VMeets all requirements for RF bypasscapacitor
This work was supported by Institute of Microelectronics (Singapore) under Grant R-263-000-233-490 and the National University of Singapore under Grant R-263-000-221-112.