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Temperature-Dependent Performance of AlGaN-Based LEDs

This paper investigates the impact of Al content on high-performance AlGaN LEDs, analyzing temperature-dependent behavior and emission properties. AlGaN LEDs face challenges due to self-heating and current crowding. The study contrasts AlGaN LEDs with InGaN LEDs and explores UV emission sensitivity to temperature variations. Results show the influence of carrier-confining potentials and junction temperature on LED performance.

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Temperature-Dependent Performance of AlGaN-Based LEDs

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  1. Introduction • Compared to InGaN-based LEDs, AlGaN LEDs may be subject to more severe self-heating due to higher operation voltage and lower radiative efficiency. The poor electrical conductivity of AlGaN materials was found to exacerbate the current crowding and localized heating problems. • In this paper, we report on the temperature-dependent performance of state-of-the-art AlGaN-based LEDswith different Al contents. In contrast to dominant localized stated emission in InGaN LEDs, the UV emission is mainly caused by band-to-band transition, and much more sensitive tothe junction temperature due to smaller carrier-confining and localization potentials.

  2. Structure Chip Size: 7.0*10-4 cm2 P p+-GaN: Mg cladding p-AlGaN: Mg cladding N AlGaN MQW 365, 335, 280, and 265nm @10mA n-AlGaN:Si cladding AlN/AlGaNSuperlattice Migration-enhanced MOCVD AlN sapphire (Flip-Chip on PCB)

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