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Test beam results of MCz-Si detectors

P. Luukka On behalf of the CMS SiBT group ( http://www.hip.fi/research/cms/tracker/SiBT/php/home.php). Test beam results of MCz-Si detectors. Beam studies. Summer 2007 Commissioning of the upgraded SiBT (converted CMS long-term test system) at CERN H2 beam line.

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Test beam results of MCz-Si detectors

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  1. P. Luukka On behalf of the CMS SiBT group (http://www.hip.fi/research/cms/tracker/SiBT/php/home.php) Test beam results of MCz-Si detectors

  2. P. Luukka (Helsinki Institute of Physics) Beam studies • Summer 2007 • Commissioning of the upgraded SiBT (converted CMS long-term test system) at CERN H2 beam line. • N-type MCz-sensors (non-irradiated and two irradiated sensors) • 10-20 Hz DAQ rate • Summer 2008 • New n-type MCz sensors • FZ sensors (wafers from RD50 common order with Topsil) • Data acquisition rate increased to 100 Hz • Cold box temperature lowered • Introduction of a separate “cold finger” for CID studies • Summer 2009 • p-type MCz in addition to new n-type MCz and FZ sensors • Biasing range extended from 600 to 1000 V

  3. P. Luukka (Helsinki Institute of Physics) Test beam setup • CERN North area SPS H2 beamline • 225 GeV muon, pion, and mixed beams • 10 slot beam telescope based on CMS module test station • 8 reference modules and 1-2 DUTs in central slots • CMS DAQ electronics with early version of the Tracker SW • CMSSW framework used for track reconstruction

  4. P. Luukka (Helsinki Institute of Physics) Sensors • Telescope reference sensors: • Provided by the D0 collaboration from unused Run IIb stock • Hamamatsu FZ • 4 cm x 10 cm • 60 μm pitch with intermediate strips • 639 strips per detector • N- and p-type MCz, FZ and CID sensors: • Processed at Helsinki University of Technology • Micronova Centre for Micro and Nanotechnology • 4” silicon wafers from Okmetic and Topsil • Two 4 cm x 4 cm detectors from one wafer • 50 μm pitch • 768 strips per detector

  5. P. Luukka (Helsinki Institute of Physics) Relative CCE as a function of fluence

  6. P. Luukka (Helsinki Institute of Physics) Landau distributions of n-type MCz-Si sensors

  7. P. Luukka (Helsinki Institute of Physics) Collected Charge -n and p-type Mcz-Si sensors

  8. P. Luukka (Helsinki Institute of Physics) CCE of Charge Injected Detectors(operating at -500C, RD39)

  9. P. Luukka (Helsinki Institute of Physics) Summary and conclusions • n-type MCz-Si operational after 1×101 5 ne q/cm2 ,i.e. feasible for S-LHC strip layers. • p-type MCz-Si 40% CCE @ 600V and 55% CCE @ 1100V after 2×101 5 ne q/cm2. • Performance on p-type similar to n-type after 2 times higher fluence • No avalanche multiplication observed up to 1100V

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