bipolar junction transistors bjt l.
Download
Skip this Video
Loading SlideShow in 5 Seconds..
Bipolar Junction Transistors (BJT) PowerPoint Presentation
Download Presentation
Bipolar Junction Transistors (BJT)

Loading in 2 Seconds...

play fullscreen
1 / 31

Bipolar Junction Transistors (BJT) - PowerPoint PPT Presentation


  • 676 Views
  • Uploaded on

Bipolar Junction Transistors (BJT). Small Signal Analysis Graphical Analysis / Biasing Amplifier, Switch and Logic Appl. . HW # 2. HW 2 due Friday 3.52, 3.72, 3.66 , 3.98. NPN Transistor Amplifier. Example. NPN. Quiescent point. Small Signal Analysis. BJT as Amplifier.

loader
I am the owner, or an agent authorized to act on behalf of the owner, of the copyrighted work described.
capcha
Download Presentation

Bipolar Junction Transistors (BJT)


An Image/Link below is provided (as is) to download presentation

Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author.While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server.


- - - - - - - - - - - - - - - - - - - - - - - - - - E N D - - - - - - - - - - - - - - - - - - - - - - - - - -
Presentation Transcript
bipolar junction transistors bjt
September 10, 2007

Bipolar Junction Transistors (BJT)

Small Signal Analysis

Graphical Analysis / Biasing

Amplifier, Switch and Logic Appl.

slide2
September 10, 2007

HW # 2

HW 2 due Friday

3.52, 3.72, 3.66 , 3.98

bjt as amplifier
BJT as Amplifier

September 10, 2007

BJT as a current-controlled current source (a current amplifier).

BJT as a voltage-controlled current source ( a transconductance amplifier)

small signal
Small Signal

September 10, 2007

small signal analysis7
September 10, 2007Small Signal Analysis
  • Employ either hybrid-p model.
  • Using the first model
  • BJT as Amplifier

Dependent Current Source

C

B

VBE

E

signal waveforms
Signal Waveforms

September 10, 2007

pnp transistor amplifier
September 10, 2007PNP Transistor Amplifier

Example

  • Voltage Gain
  • Signal Waveforms
  • Capacitor couples input signal vi to emitter
  • DC bias with V+ &V-
dc analysis
September 10, 2007DC Analysis
  • Find operating pt. Q
  • Let b=100 and a=0.99
  • The transistor is active
  • Max. signal swing depends on bias voltage
small signal analysis11
September 10, 2007Small Signal Analysis
  • Replace BJT with T equivalent ckt.
  • Why? Base is gnded. More convenient than hybrid p
  • a= 0.99 re=25mV/0.93mA= 27 W
small signal equiv ckt
September 10, 2007Small Signal Equiv Ckt
  • VO/Vi =0.99x5k/27=183
  • Allowable signal magnitude?
  • But veb = vi For small signal limit to 10mV.

Then, vc=1.833V

graphical analysis
September 10, 2007Graphical Analysis
  • Find DC bias point
  • Set vi=0 and draw load line to determine dc bias point IB (similar to diode ckts)
graphical construction
September 10, 2007Graphical Construction
  • Load line has a slope of –1/RB
  • iB vs vBE from forward biased diode eqns

Graphical construction for the determination of the dc base current

collector current
Collector Current

September 10, 2007

Graphical construction for determining the dc collector current IC and the collector-to-emmiter voltage

small signal graphical analysis
September 10, 2007Small Signal Graphical Analysis
  • Signal is superimposed on DC voltage VBB
  • Corresponding to each instantaneous value of VBB + vi(t) draw a load line
  • Intersection of the iB -vBE curve with the load lines
  • Amplitude vi(t) small so ib linear
collector currrent
September 10, 2007Collector Currrent
  • Corresponding to each instantaneous value of VCE + vce(t) operating point will be on the load line
  • Amplitude vi(t) small so ic linear
bias point vs signal swing
September 10, 2007Bias Point vs Signal Swing
  • Bias-point location limits allowable signal swing
  • Load-line A results in bias point QA with a corresponding VCE which is too close to VCC and thus limits the positive swing of vCE.
  • At the other extreme, load-line B results in an operating point too close to the saturation region, thus limiting the negative swing of vCE.
basic single stage amplifiers
Basic Single Stage Amplifiers

September 10, 2007

Common-emitter amplifier with a resistance Re in the emitter. (a) Circuit. (b) Equivalent circuit with the BJT replaced with its T model (c) The circuit in (b) with ro eliminated.

common base amp
Common Base Amp

September 10, 2007

The common-base amplifier. (a) Circuit. (b) Equivalent circuit obtained by replacing the BJT with its T model.

common collector
Common Collector

September 10, 2007

The common-collector or emitter-follower amplifier. (a) Circuit. (b) Equivalent circuit obtained by replacing the BJT with its T model.

slide22
September 10, 2007

(c) The circuit redrawn to show that ro is in parallel with RL.

(d) Circuit for determining Ro.

general large signal model
General Large Signal Model

September 10, 2007

An npn resistor and its Ebers-Moll (EM) model. The scale or saturation currents of diodes DE (EBJ) and DC (CBJ) are indicated in parentheses.

slide24
September 10, 2007

The transport model of the npn BJT. This model is exactly equivalent to the Ebers-Moll model

Saturation currents of the diodes in parentheses

bjt digital logic
BJT Digital Logic

September 10, 2007

Basic BJT digital logic inverter.

slide26
September 10, 2007
  • voltage transfer characteristic of the inverter circuit
  • RB = 10 k, RC = 1 k,  = 50, and VCC = 5V.
saturation region
Saturation Region

September 10, 2007

The minority-carrier concentration in the base of a saturated transistor is represented by line (c). (b) The minority-carrier charge stored in the base can de divided into two components: That in blue produces the gradient that gives rise to the diffusion current across the base, and that in gray results in driving the transistor deeper into saturation.

slide28
September 10, 2007

The ic-vcb or common-base characteristics of an npn transistor. Note that in the active region there is a slight dependence of iC on the value of vCB. The result is a finite output resistance that decreases as the current level in the device is increased.

common base characteristic
Common Base Characteristic

September 10, 2007

The hybrid-p model, including the resistance r, which models the effect of vc on ib.