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WP7 (NA6): Advanced hybrid pixel detectors

This article provides an overview of the challenges faced in the development of advanced hybrid pixel detectors, including planar, 3D, and LGADs. It also discusses the characterizations of existing prototypes and the milestones achieved in the project. The article highlights the impact of delays caused by the shutdown of CERN accelerators and the rescheduling of deliverables. Additionally, it mentions the coordination highlights such as face-to-face meetings and common test beams. The manufacturing runs of extra-thin SiSiLGADs, single-sided SiSi3D pixels, and active-edge planar pixels are described. The progress and challenges in small-cell 3D pixels and AE planar pixels are also discussed.

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WP7 (NA6): Advanced hybrid pixel detectors

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  1. WP7 (NA6): Advanced hybrid pixel detectors Anna Macchiolo (MPG-MPP), Iván Vila (CSIC-IFCA)

  2. Outline • Brief introduction to WP7: • Deliverables & milestones • Challenges and context. • Other coordination highlights • Production runs • Planar, 3D and LGADs • Characterizations of exiting prototypes. • TCAD benchmarking: surface damage modeling • Summary and Outlook I. Vila, 26 April 2018, C. San Domenico, Bologna

  3. WP7 in a nutshell Radiation-tolerant vertexing & timing sensors I. Vila, 26 April 2018, C. San Domenico, Bologna

  4. WP7 Milestones I. Vila, 26 April 2018, C. San Domenico, Bologna 4

  5. WP7 Deliverables Device simulation Device characterization We are in month 36 of 48 = 3/4 of the total (initial) duration of the project Expect now (3/5 of execution) assuming the one-year extension is approved I. Vila, 26 April 2018, C. San Domenico, Bologna 5

  6. Deliverable datemodification • D7.4TCAD model radiation damage M46 postponed to M52 (SEP 2019) • D7.7 Final pixel characterisation M46 postponed to M52 (SEP 2019) • D7.8LGAD characterisation M46 postponed to M52 (SEP 2019) • While the production of pixel and LGAD devices is on schedule, the availability of irradiation facilities will be reduced due to the shutdown of CERN accelerators from December 2018, which was not foreseen and which will likely lead to delays in irradiation and subsequent characterisation (D7.7, D7.8). D7.4 requires the results of D7.7 and D7.8 for model validation. • Maybe irradiating at Los Alamos or FNAL is the only sensible option to reach the fluencies required by the innermost layers (dominated by protons) with dose below the current RD53 limit dose specification of 5MGy What this delay implies to the sensor’s RD program of the ATLAS and CMS inner tracker and mip timing detectors ? I. Vila, 26 April 2018, C. San Domenico, Bologna

  7. WP7 Challenges and Context • In a range of 12-18 months Atlas & CMS will resolve on the sensor technology for the innermost pixel layers: • Generic aspects: • pixel cell layout (squared vs rectangular, 50x50 vs 25x100 um2), active thickness, slim edges, implementation of biasing grid. • Technology-specific aspects: • Planar option key challenge: thermal runaway & sparking suppression (technology requires very high HV bias). • 3D option key challenge: production yield of the 25x100 um2pixel cell (2 electrodes) and radiation-tolerance of 1E option. • With similar time scope the qualification of the LGAD detectors for the, just created, MIP timing sub-detectors I. Vila, 26 April 2018, C. San Domenico, Bologna

  8. WP7 Challenges and Context(2) • WP7 AIDA-2020 activities incorporated and supported the specific Atlas and CMS R&D sensor program, specially for the case of the 3D and LGADs sensors where CSIC-CNM and FBK are leading manufacturing centers. • The rescheduling of the characterization deliverables enhances the alignment and synergies between the WP7 and the collaboration R&D groups. I. Vila, 26 April 2018, C. San Domenico, Bologna

  9. Other Coordination Highlights • A two-day face-to-face satellite meeting at the 13th "Trento" Workshop on Advanced Silicon Radiation Detectors (Feb 2018). The source of most of the material presented there. • https://indico.cern.ch/event/691359/ • Common test beam at CERN SPS North Area (one week 2017). • This year two weeks at SPS (June and October) I. Vila, 26 April 2018, C. San Domenico, Bologna

  10. FOUR Manufacturing runs Extra-Thin SiSiLGADs Single-Sided SoI & SiSi3D PIXELS Single-Sided SiSi3D PIXELS ACTIVE EDGE PLANAR PIXEL I. Vila, 26 April 2018, C. San Domenico, Bologna

  11. Small –cell 3D pixels RUN COMPLETED AND SENSORS & READY FOR FLIP-CHIPPING AT IZM NOW! FIRST 3D PIXELS EVER WITH RD53A LAYOUT ! Ok - pixel cell 50x50 – 1E Ok - pixel cell 25x100 - 1E Problem - pixel cell 25x100-2E Issue with 25x100-2E understood, too short distance between ohmic column & routing metal  Fabrication with stepper photolithography to increase precision and re-design of the metal routing. I. Vila, 26 April 2018, C. San Domenico, Bologna

  12. Small-cell 3D pixels Currently two 3D productions with RD53A layout in parallel at IMB-CNM: double-sided technology and single-sided technology. Initial approach: double-side run as AIDA-2020. Post Atlas & CMS TDR approach: single-sided as preferred technology. Re-align AIDA-2020 WP7 with Atlas and CMS choices : Single-Sided run Vertical junction: allow for simple slim edge and radiation tolerant layouts, and operation but entails complex fabrication. In progress expect delivery Nov/Dec 2018 150 um active thickness SiSi I. Vila, 26 April 2018, C. San Domenico, Bologna

  13. Small-cell AE Planar pixels Planar junction: allows for simple fabrication but radiation tolerance entails complex operation conditions To be submitted in June (turnaround  4 months) • Continuous trenches - Width < 10 um • SOI wafers with 100 and 150 mm thickness • Poly-silicon filling, multi-geometries (# of GR) • Substrates thinning leads to structure separation • SOI wafers from ICEMOS expected in June I. Vila, 26 April 2018, C. San Domenico, Bologna

  14. Very-thin LGADs • In progress delivery expected by July/Sept. 2018 • Lay-out agreed with CMS and Atlas MIP timing detector groups. • Two RD targets: • Increase the radiation tolerance by reducing the active thickness up to 35um (mitigation of double-junction induced gain reduction) • Increase the gain fill factor by reducing the width of JTE of the LGADs (reducing the inter-pad no-gain area) • 6x CMS_3x1_4x24_JTE • 2x: JTE = 5 μm (1) • 2x: JTE = 10 μm (2) • 2x: JTE = 15 μm (3) 22x HGTD_S_5x5_BUMPADS (7) ATLAS HGTD Array 5x5 (1.3 x 1.3 mm2) I. Vila, 26 April 2018, C. San Domenico, Bologna

  15. Characterization Small-cell 3D First time: small-cell both 3D sensor and ROC Read out Chip & beam setup 5.6 GeV Electrons at DESY • ROC4SENS • No discriminator, analoguesignal transmission. • Simple operation: no zero suppression, • no comparator, no DAC or other programming • Small pitch for phase II sensor • development: 50 × 50 um2. • Expected to be as radiation hard as the tested • sensors. Asynchronous: no timestamps, • hold signal has no clock sampling. I. Vila, 26 April 2018, C. San Domenico, Bologna

  16. Characterization Small-cell 3D Efficiency non-irradiated Efficiency irradiated I. Vila, 26 April 2018, C. San Domenico, Bologna

  17. 3D Pixels : Other studies • Slim edge out of the box implementation in 3D technology • Current consumption studies at IBL Current of modules at centreof IBL greater than 30 cmalong thebeam; Checks to establish other source of leakage current like temperature variation seem to be excluded. I. Vila, 26 April 2018, C. San Domenico, Bologna

  18. Characterization thin planar Standard pixel cell, FE-I4 Readout ROC Collaboration between ATLAS-CMS groups I. Vila, 26 April 2018, C. San Domenico, Bologna

  19. Characterization AE planar Excellent efficiency but early Voltage breakdown induced I. Vila, 26 April 2018, C. San Domenico, Bologna

  20. Planar: other studies • High density Bump bonding quality study • daisy chain dummy modules with high density bumps TiW patterning No PT • QA using a biasing grid vs a temporary metal • Comparison of measurements on sensors with PT : using TiW and after TiW removal I. Vila, 26 April 2018, C. San Domenico, Bologna

  21. Characterization LGAD Multiplication layer divided into strip Multiplication layer extended over the electrode Collects negative carriers (e) Collects positive carriers (h) Simple single sideprocessComplexdoublesideprocess I-LGAD basics I. Vila, 26 April 2018, C. San Domenico, Bologna

  22. Characterization LGAD Tracking performance Gain Spatial Uniformity: Collected Charge LGAD I-LGAD PIN I. Vila, 26 April 2018, C. San Domenico, Bologna

  23. Characterization LGAD Defining the effective SNR as Expected time error dependence with SNR  I-LGADTiming IR-Laser setup I. Vila, 26 April 2018, C. San Domenico, Bologna

  24. TCAD : Surface Damage Modeling I. Vila, 26 April 2018, C. San Domenico, Bologna

  25. TCAD : Surface Damage Modeling I. Vila, 26 April 2018, C. San Domenico, Bologna

  26. 3D Simulations Validation I. Vila, 26 April 2018, C. San Domenico, Bologna

  27. Summary & outlook • Timely achievement of deliverables and milestones • Last 12 month focused: • On the definition of the manufacturing runs at CNM and FBK(3 out of 4 run). Pending run to be launched in June. All should be completed on time. • Characterization, achieving the expected results, of pre-existing prototypes in all the technologies • 3D FBK run completed! Devices (to be shared among CMS and Atlas) ready for flip-chipping with the first RD53A chips at IZM. • Next 12 month are critical on the definition of the preferred technology for the innermost layers of the HL-LHC. To work fully aligned with Atlas and CMS RD sensor groups. AIDA -2020 can and should be “used” to increase cross-collaboration coordination. • Along the same lines we should increase the collaboration with the brand-new mip timing sub-systems to help to bring to full maturity the LGAD technology. I. Vila, 26 April 2018, C. San Domenico, Bologna

  28. GRAZIE MILLE I. Vila, 26 April 2018, C. San Domenico, Bologna

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