1 / 18

Politecnico di Bari Engineering Faculty - Electronics Engineering Course Thesis in MICROWAVES

Politecnico di Bari Engineering Faculty - Electronics Engineering Course Thesis in MICROWAVES.

megan-ware
Download Presentation

Politecnico di Bari Engineering Faculty - Electronics Engineering Course Thesis in MICROWAVES

An Image/Link below is provided (as is) to download presentation Download Policy: Content on the Website is provided to you AS IS for your information and personal use and may not be sold / licensed / shared on other websites without getting consent from its author. Content is provided to you AS IS for your information and personal use only. Download presentation by click this link. While downloading, if for some reason you are not able to download a presentation, the publisher may have deleted the file from their server. During download, if you can't get a presentation, the file might be deleted by the publisher.

E N D

Presentation Transcript


  1. Politecnico di BariEngineering Faculty - Electronics Engineering CourseThesis in MICROWAVES In partnership withSTMicroelectronicsDESIGN OF A CLASS 1 POWER AMPLIFIER FOR BLUETOOTHTM APPLICATIONSAdvisors CandidateProf. Antonella D’Orazio Giovanni DE FILIPPOTutor.Dr. Roberto Antonicelli.A.Y. 2004-05

  2. OUTLINE • CHECK OF SUITABLE COMPONENTS • DESIGN AND ANALYSIS USING ANSOFT DESIGNER SV • REALIZATION • MEASUREMENTS • STLC2500 WITH CLASS 1 PA IMPLEMENTATION

  3. DESIGN CHALLENGES • LOW COST • HIGH POWER GAIN • MINIMAL BOM

  4. ELECTRICAL SPECIFICATIONS • Central Frequency: 2.45 GHz • Bandwidth: 100 MHz • Input and Output Impedance: 50 Ohms • Output Powers: 10, 14 and 18 dBm • Supply Voltage: 2.75 Volts • Operating Temperature: -40 to +85°C

  5. Enable and Power Control Biasing Transistor RF Choke to DC Bias Input Matching DC Block Output Matching DC Block DESIGN MODEL

  6. Output Matching DC Block Input Matching DC Block Trasmission Line Model RF Power Transistor RF Choke to DC Bias DESIGN MODEL

  7. ANALYSIS Gain from 500 MHz to 3 GHz S11 and S22 at 2.45 GHz

  8. ANALYSIS Stability factor from 500 MHz to 3 GHz Input and output return loss from 500 MHz to 3 GHz

  9. REALIZATION Photograph of the Class 1 PA PCB Layout

  10. MEASUREMENTS Photograph of the Test Setup Class 1 Power Amplifier and Measurement Setup

  11. MEASUREMENTS S22 in Bluetooth Band S11 in Bluetooth Band

  12. MEASUREMENTS Gain, Output Power and Efficiency versus Input Power at 27 °C

  13. MEASUREMENTS Output Power Efficiency versus Input Power for different Temperatures

  14. MEASUREMENTS Pout and Efficiency vs Pin at various Temperatures and Vcc Vcc = 2.50 V Vcc = 3.00 V

  15. PERFORMANCE OVERVIEW • Compression Point P-1dB = 20 dBm • Power Gain Gp = 12 dB • Current consumption at max power Icc = 53 mA • Added Efficiency η = 70 %

  16. STLC2500 CLASS 1 SOLUTION Output Power Output Spectrum, Adjacent Channel Power

  17. STLC2500 CLASS 1 SOLUTION RF = LO – BB = 2.44084 GHz IM = LO + BB = 2.44116 GHz PULLING = LO – 3BB = 2.44052 GHz Pulling Behavior at Default Gain Settings Output Spectrum

  18. CONCLUSIONS • Single transistor, small sized Bluetooth Class 1 power amplifier • Lowest cost in marketplace • High gain and high 1 dB-compression point • 12mA of quiescent current and 70% total efficiency • Single 2.75V supply voltage • Minimum BOM • Stable behavior versus temperature and Vcc

More Related